Semiconductor module having heat sink serving as wiring line
AssigneeKabushiki Kaisha Toshiba
InventorNobuyuki Sato
Life of this patent
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Abstract
A semiconductor module includes a parts-mounting or packaging substrate, a plurality of power metal insulator semiconductor (MIS) chips which have top surfaces and back surfaces and are mounted by flip chip bonding on or above the package substrate while letting the top-surfaces face the package substrate, a drive-use integrated circuit (IC) chip which is mounted by flip chip bonding above the package substrate for driving the gates of metal insulator semiconductor field effect transistors (MISFETs) that are formed on the power MIS chips, a plurality of heat sinks disposed on or above the back surfaces of the power MXS chips, and a resin member for sealing the power MIS chips and the driver IC chip together in a single package.
Claims20
A semiconductor module comprising:
- a package substrate with a plurality of terminals and a wiring line connected to said terminals;
- a plurality of power switching device chips having a first electrode on top surfaces and a second electrode on back surfaces, configured to flow current between said first and second electrode, and being mounted above said package substrate while letting said top surfaces face said package substrate;
- a drive-use integrated circuit (“IC”) chip mounted above said package substrate, configured to drive gates of transistors formed in said-plurality of power switching device chips;
- a plurality of heat sinks disposed above said second electrode on said back surfaces of said plurality of power switching device chips, electrically connected to said second electrode on said back surfaces and said terminals of said package substrate, and serving as a wiring line to said plurality of power switching device chips;
- and
- a resin member configured to seal said plurality of power switching device chips and said drive-use IC chip as a single package.
A DC-DC converter with a semiconductor module, said semiconductor module comprising:
- a package substrate with a plurality of terminals and a wiring line connected to said terminals;
- a plurality of power switching device chips having a first electrode on top surfaces and a second electrode on back surfaces, configured to flow current between said first and second electrode, and being mounted above said package substrate while letting said top surfaces face said package substrate;
- a drive-use integrated circuit (“IC”) chip mounted above said package substrate, configured to drive gates of transistors formed in said plurality of power switching device chips;
- a plurality of heat sinks disposed above said second electrode on said back surfaces of said plurality of power switching device chips, electrically connected to said second electrode on said back surfaces and said terminals of said package substrate, and serving as a wiring line to said plurality of power switching device chips;
- and
- a resin member configured to seal said plurality of power switching device chips and said drive-use IC chip as a single package.
A semiconductor module comprising:
- a package substrate;
- first power switching device chips having electrodes on top surfaces and on back surfaces, configured to flow current between said electrodes, and being mounted above said package substrate while letting said top surfaces face said package substrate;
- second power switching device chips having electrodes on top surfaces and back surfaces, configured to flow current between said electrodes, and being mounted above said package substrate while letting said top surface face said package substrate;
- a drive-use integrated circuit (“IC”) chip mounted above said package substrate, configured to drive gates of transistors formed in said first and second power switching device chips;
- a first heat sink disposed above said electrode on said back surfaces of said first power switching device chip,
- a second heat sink disposed above said electrode on said back surfaces of said second power switching device chip, and
- a resin member configured to seal said first and second power switching device chips and said drive-use IC chip as a single package,
- wherein said electrode on said back surface of said first power switching device chip is electrically connected to said electrode on said top surfaces of said second power switching device chip via said first heat sink.
Dependencies are inferred from the claim text.