Siloxane-based resin and a semiconductor interlayer insulating film using the same

A siloxane-based resin prepared by hydrolyzing and condensing a silane-based monomer having the structure of Formula 1, and at least one monomer selected from the group consisting of compounds of Formulas 2 to 4, in an organic solvent in the presence of an acid or alkaline catalyst and water:

• Si[(CH2)kSiY1Y2Y3]4 Formula 1
• wherein,
• k is an integer of 1–10;
• and
• Y1, Y2 and Y3 are independently a C1–C3 alkyl group, a C1–C10 alkoxy group, or a halogen atom, provided that at least one of them is hydrolyzable,
• wherein,
• R1 is a C1–C3 alkyl group, or a C6–C15 aryl group;
• X1, X2 and X3 are independently a hydrogen atom, a C1–C3 alkyl group, a C1–C10 alkoxy group, or a halogen atom, provided that at least one of them is hydrolyzable;
• m is an integer of 0–10;
• and
• p is an integer of 3–8,
• wherein,
• R2 is a C1–C3 alkyl group, or a C6–C15 aryl group;
• X4 is a hydrogen atom, or a C1–C10 alkoxy group;
• Y1 is a hydrogen atom, a C1–C3 alkyl group or a C1–C10 alkoxy group;
• and
• n is an integer of 0–10, and
• R3SiX5X6X7 Formula 4
• wherein,
• R3 is a C1–C3 alkyl group, or a C6–C15 aryl group;
• X5, X6 and X7 are independently a hydrogen atom, a C1–C3 alkyl group,
• a C1–C10 alkoxy group, or a halogen atom, provided that at least one of them is hydrolyzable.