One stack with steam oxide for charge retention
AssigneeSpansion LLC
InventorsHidehiko Shiraiwa, Harpreet K. Sachar, Mark Randolph, Wei Zheng
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Abstract
A semiconductor device includes a substrate that further includes source, drain and channel regions. The device may further include a bottom oxide layer formed upon the substrate, a charge storage layer formed upon the bottom oxide layer, and a steam oxide layer thermally grown upon the charge storage layer. The device may also include an alumina oxide layer formed upon the steam oxide layer and a gate electrode formed upon the alumina oxide layer.
Claims18
A structure for use in a semiconductor device, comprising:
- a first oxide layer;
- a charge storage layer formed upon the first oxide layer;
- a steam oxide layer thermally grown upon the charge storage layer;
- and
- an alumina oxide layer formed upon the steam oxide layer.
A method of forming a charge retention structure for a semiconductor device, comprising:
- forming a first oxide layer upon a substrate;
- forming a charge storage layer upon the first oxide layer;
- thermally growing an oxide layer upon the charge storage layer in a water vapor or steam environment;
- and
- forming an alumina oxide layer upon the thermally grown oxide layer.
A memory device, comprising:
- a substrate comprising source, drain and channel regions;
- a bottom oxide layer formed upon the substrate;
- a charge storage layer formed upon the bottom oxide layer;
- a thermally grown oxide layer formed upon the charge storage layer;
- an alumina oxide layer formed upon the thermally grown oxide layer;
- and
- a gate electrode formed upon the alumina oxide layer.
Dependencies are inferred from the claim text.