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US 7,071,536 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeNissan Motor Co., Ltd.
InventorsSaichirou Kaneko, Masakatsu Hoshi, Yoshinori Murakami, Tetsuya Hayashi, Hideaki Tanaka
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Abstract
A high voltage semiconductor device having a high current gain hFE is formed with a collector region (20) of a first conduction type, an emitter region (40) of the first conduction type, and a base region (30) of a second conduction type opposite to the first conduction type located between the collector region and the emitter region. The free carrier density of the base region (30) where no depletion layer is formed is smaller than the space charge density of a depletion layer formed in the base region (30).
Claims12
A semiconductor device comprising:
- a collector region of a first conduction type;
- an emitter region of the first conduction type;
- a base region of a second conduction type opposite to the first conduction type located between the collector region and the emitter region,
- wherein the base region includes a punch-through stop region of the second conduction type adjacent to the emitter region, and
- wherein the free carrier density of the punch-through stop region where no depletion layer is formed is smaller than the space charge density of a depletion layer formed in the punch-through stop region.
2 more elements
Dependencies are inferred from the claim text.