Schottky device

A Schottky device having a positive terminal and a negative terminal, comprising:

• a Schottky-like device having a positive terminal and a negative terminal, wherein the positive terminal of the Schottky-like device operates as the positive terminal of the Schottky device;
• and
• a depletion transistor having a first current electrode coupled to the negative terminal of the Schottky-like device, a tate coupled to the positive terminal of the Schottky-Iike device, and a second current electrode that operates as the negative terminal of the Schottky device,
• wherein the Schottky device is formed in a semiconductor region of a substrate having:
• a first well region of the first conductitivity type;
• a second well region of the second conductivity type adjacent to the first well;
• a first doped region that is the first conductivity type, located at the surface of the substrate, and coupled to the first positive terminal of the Schottky device, more heavily doped than the first well region, and in the first well region;
• a metal on a first portion of the first well that forms a Schottky diode, wherein the metal is the negative terminal of the Schottky diode and the first portion of the first well is the positive terminal of the Schottky diode;
• a first isolation region in the first well region between the first portion of the first well region and the first doped region;
• a channel region that is of the second conductivity type, spaced from the first portion of the first well region, in the first well region, and at the surface of the substrate;
• a gate that is over the channel region;
• a second doped region that is the second conductivity type, the first current electrode of the depletion transistor, more heavily doped than the channel region, and adjacent to and in contact with the channel region and that has at least a portion under and in contact with the metal;
• a third doped region that is spaced from the channel region, the second conductivity type, the second current electrode of the depletion transistor, at the surface of the substrate, in the second well region, and the negative terminal of the Schottky device;
• and
• a second isolation region between the channel region and the third doped region.

A Schottky device having a positive terminal and a negative terminal, comprising:

• substrate having a semiconductor region;
• a first well region of the first conductivity type in the semiconductor region;
• a second well region of the second conductivity type adjacent to the first well and in the semiconductor region;
• a first doped region that is the first conductivity type, located at the surface of the substrate, more heavily doped than the first well region, coupled to the positive terminal, and in the first well region;
• a metal on a first portion of the first well region;
• a first isolation region in the first well region between the first portion of the first well region and the first doped region;
• a channel region that is of the second conductivity type, spaced from the first portion of the first well, in the first well, and at the surface of the substrate;
• a gate that is over the channel region;
• a second doped region that is in the first well region, the second conductivity type, more heavily doped than the channel region, and adjacent to and in contact with the channel region and that has at least a portion under and in contact with the metal;
• a third doped region that is spaced from the channel region, the second conductivity type, at the surface of the substrate, in the second well region, and the negative terminal of the Schottky device;
• and
• a second isolation region between the channel region and the third doped region.

A Schottky device having a first terminal and a second terminal, comprising:

• a Schottky-like device having a first terminal coupled to the first terminal of the Schottky device and a second terminal;
• and
• a transistor having a gate coupled to the first terminal of the Schottky device, a first current electrode coupled to the second terminal of the Schottky-like device, and a second current electrode coupled to the second terminal of the Schottky devices;
• wherein the Schottky-like device is a low threshold voltage transistor having a first current electrode, a gate, and body tied together to form the first terminal of the Schottky-like device and a second current electrode as the second terminal of the Schottky-like device.