Non-volatile semiconductor memory device
AssigneeNEC Electronics Corporation
InventorsKenichiro Nakagawa, Tomohiro Hamajima, Koichi Ando
Life of this patent
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Abstract
A non-volatile semiconductor memory device includes a substrate, a first insulating film formed on the substrate, a second insulating film formed on the first insulating film, a plurality of granular dots formed in the second insulating film adjacent to the first insulating film as a floating gate, and a control gate formed on the second insulating film. The second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of the first insulating film and whose heat of formation is higher than that of silicon oxide.
Claims12
A non-volatile semiconductor memory device comprising:
- a substrate;
- a first insulating film formed on said substrate;
- a second insulating film formed on said first insulating film;
- a plurality of granular dots formed in said second insulating film adjacent to said first insulating film as a floating gate;
- and
- a control gate formed on said second insulating film,
- wherein said second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of said first insulating film and whose heat of formation is higher than that of silicon oxide.
A semiconductor device comprising:
- a substrate;
- a non-volatile memory cell formed on said substrate;
- and
- an integrated circuit formed on said substrate,
- wherein said non-volatile memory cell includes:
- a first insulating film formed on said substrate;
- a second insulating film formed on said first insulating film;
- a plurality of granular dots formed in said second insulating film adjacent to said first insulating film as a floating gate;
- and
- a control gate formed on said second insulating film,
- wherein said second insulating film is a high dielectric constant film made of oxide whose dielectric constant is higher than that of said first insulating film and whose heat of formation is higher than that of silicon oxide, and at least a part of a gate insulating film of a transistor included in said integrated circuit is said high dielectric constant film.
Dependencies are inferred from the claim text.