Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Garo J. Derderian
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Abstract
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
Claims12
A semiconductor construction, comprising:
- a semiconductor substrate;
- a silicon-containing electrically conductive node supported by the semiconductor substrate;
- a first conductive layer physically against a surface of the conductive node and shaped as a container;
- the first conductive layer having a first thickness and having columnar grain boundaries extending across the first thickness;
- and
- a second conductive layer over the container and physically against an upper surface of the container;
- the second conductive layer comprising a second thickness and having columnar grain boundaries extending across the second thickness.
Dependencies are inferred from the claim text.