US 7,071,500 B2 · Semiconductor device and manufacturing method for the same

Abstract

A bipolar semiconductor device including a collector layer covered at a portion of an outer periphery thereof with an insulating film and having a shape extending in an upper direction and a horizontal direction, with a gap being formed between the collector layer and the insulating film, and further including a base layer and an emitter layer disposed over the collector layer, and a manufacturing method of the semiconductor device. Since the collector layer has a shape extending in a portion thereof in the upward direction and the horizontal direction, an external collector region can be deleted, and both the parasitic capacitance and the collector capacitance in the intrinsic portion attributable to the collector can be decreased and, accordingly, a bipolar transistor capable of high speed operation at a reduced consumption power can be constituted.

Claims5

Dependent claims

A semiconductor device, comprising:

a first semiconductor layer of a first conduction type disposed over a semiconductor transistor region of a semiconductor substrate, wherein the semiconductor transistor region has an outer periphery substantially covered along the a vertical extension thereof with a first insulating film, wherein the first semiconductor layer has a shape extending in an upward direction and in a horizontal direction starting from a vertical intersect of the semiconductor transistor region and the first insulating film;
a second semiconductor layer of a second conduction type disposed over the first semiconductor layer;
and
a third semiconductor layer of the first conduction type disposed over the second semiconductor layer;
wherein a cavity is formed surrounding the first semiconductor layer, bounded at a lower portion thereof by the first insulating film.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device and manufacturing method for the same

Life of this patent

Semiconductor device and manufacturing method for the same

Life of this patent

Abstract

Claims5