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US 7,071,497 B2Granted
Two-wavelength semiconductor laser device and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorChong Mann Koh
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Abstract
A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second region and has the same layers as those of the first semiconductor laser diode. A second semiconductor laser diode is formed on the non-active layer. A lateral conductive region is formed at least between the first and second semiconductor laser diodes.
Claims10
A two-wavelength semiconductor laser device, comprising:
- a first conductive material substrate having an upper surface with first and second regions separated from each other thereon;
- a first semiconductor laser diode comprising a first conductive material first clad layer, a first active layer and a second conductive material first clad layer sequentially laminated on the first region of the first conductive material substrate;
- a non-active layer formed on the second region of the first conductive material substrate and comprising the same layers as those of the first conductive material first clad layer, the first active layer and the first conductive material second clad layer of the first semiconductor laser diode;
- a second semiconductor laser diode comprising a first conductive material second clad layer, a second active layer and a second conductive material second clad layer sequentially laminated on the non-active layer;
- and
- a lateral conductive region formed at least between the first and second semiconductor laser diodes such that the first conductive material second clad layer and the first conductive material substrate can be electrically connected to each other.
3 more elements
Dependencies are inferred from the claim text.