System and method for passing particles on selected areas on a wafer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen Chin Lin, Denny Tang, Li-shyue Lai, John Chern, Jyh-Chyurn Guo, Wan-Yih Lien
Life of this patent
Estimating the term…
Abstract
A method and system is disclosed for directing charged particles on predetermined areas on a target semiconductor substrate. After aligning a wafer mask with a semiconductor wafer, with the wafer mask having one or more mask patterns thereon, the charged particles are directed to pass through the mask patterns to land on one or more selected areas on the semiconductor wafer.
Claims29
A method for exposing one or more areas on a semiconductor wafer to charged particles, comprising:
- aligning a wafer mask, having one or more mask patterns thereon, with the semiconductor wafer;
- bonding the semiconductor wafer with the wafer mask;
- and
- passing the charged particle through then mask patterns to land on one or more selected areas on the semiconductor wafer.
A method of exposing one or more areas on a semiconductor wafer to charged particles for making semi-insulating areas, comprising:
- aligning a wafer mask, having one or more mask patterns thereon, with the semiconductor wafer, with the mask being a predetermined proximity to the semiconductor wafer;
- bonding the semiconductor wafer with the wafer mask;
- generating the charged particles;
- and
- directing the charged particles through the mask patterns to land on one or more selected areas on the semiconductor wafer,
- wherein semiconductor materials in the selected areas of the semiconductor wafer are transformed to have a higher resistivity than those not exposed to the charged particles.
A system for exposing one or more areas on a semiconductor wafer to charged particles, comprising:
- means for aligning a wafer mask, having one or more mask patterns thereon with the semiconductor wafer;
- means for bonding the semiconductor wafer with the wafer mask:
- means for generating the charged particles;
- and
- means for directing the charged particles through the mask patterns to land on selected areas on the semiconductor wafer.
Dependencies are inferred from the claim text.