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US 7,071,281 B2Granted
Poly(arylene ether) dielectrics
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsChristopher Lim, Siu Choon Ng, Hardy Chan, Simon Chooi, Mei Sheng Zhou
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Abstract
The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: wherein n=5 to 10000 and monovalent Ar1 and divalent Ar2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to:
Claims11
A poly(arylene ether) comprising the structure:
- wherein monovalent Ar1 and divalent Ar2 are heteroaromatic groups that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements and the ether linkage is attached directly to a heteroaromatic ring or to an aromatic ring that is fused to a heteroaromatic ring.
Dependencies are inferred from the claim text.