Plasma CVD method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Mitsunori Sakama, Masaaki Hiroki
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Abstract
In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.
Claims3
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film over an insulating surface;
- forming a gate insulating film over the semiconductor film;
- and
- forming a gate electrode over the gate insulating film,
- wherein the gate insulating film is formed by plasma CVD in which an output of an RF power supply is gradually or continuously increased to a value for forming the gate insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a TFT over an insulating surface;
- and
- forming an interlayer insulating film over the TFT;
- wherein the interlayer insulating film is formed by plasma CVD in which an output of an RF power supply is gradually or continuously increased to a value for forming the interlayer insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film comprising polycrystalline silicon:
- forming a gate insulating film over the semiconductor film comprising polycrystalline silicon;
- forming a gate electrode over the gate insulating film;
- and
- forming an interlayer insulating film over the gate electrode and the gate insulating film,
- wherein the interlayer insulating film is formed by plasma CVD in which an output of an RF power supply is gradually or continuously increased to a value for forming the interlayer insulating film.
Dependencies are inferred from the claim text.