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AssigneeProMOS Technologies Inc.
InventorsZhong Dong, Chuck Jang, Chia-Shun Hsiao
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A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant such as dichlorosilane (DCS) and an oxygen-providing reactant such as N2O. In one embodiment, a DCS-HTO film is annealed by heating N2O gas to a temperature in the range of about 825° C. to about 950° C. so as to trigger exothermic decomposition of the N2O gas and flowing the heated gas across the DCS-HTO film so that disassociated atomic oxygen radicals within the heated N2O gas can transfer disassociating energy to chlorine atoms bound within the DCS-HTO film and so that the atomic oxygen radicals can fill oxygen vacancies within the semiconductor-oxide matrix of DCS-HTO film. An improved ONO structure may be formed with the annealed DCS-HTO film for use in floating gate or other memory applications.
A method for selectively reducing concentration of contaminant particles in a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant and an oxygen-providing reactant, where the contaminant particles in the semiconductor oxide composition are materials other than said semiconductor and other than oxygen, the reducing method comprising:
A method for annealing a semiconductor oxide composition that is formed by chemical vapor deposition (CVD) using a semiconductor-element-providing reactant and an oxygen-providing reactant, where the semiconductor oxide composition includes one or both of oxygen vacancy sites and one or more halogen contaminants, the annealing method comprising:
Dependencies are inferred from the claim text.