Semiconductor devices and methods for depositing a dielectric film

A method for depositing a dielectric film, the method comprising:

• heating a substrate, within a chamber, to a temperature sufficient to thermally decompose an oxidizing component;
• and
• passing reaction gasses over the substrate forming a blanket dielectric deposition over substantially the entirety of at least one surface of the substrate, wherein the reaction gasses include a silicon bearing component, the oxidizing component, and chlorine, and wherein the silicon bearing component and the chlorine are included within distinct ones of the reaction gasses introduced into the chamber.

A method for depositing a dielectric film, the method comprising:

• heating a substrate, within a chamber, to a temperature sufficient to thermally decompose an oxidizing component;
• and
• passing reaction gasses over the substrate forming a blanket dielectric deposition over substantially the entirety of at least one surface of the substrate, wherein the reaction gasses include a silicon bearing component, the oxidizing component, and hydrogen chloride, and wherein the silicon bearing component and the hydrogen chloride are included within distinct ones of the reaction gasses introduced into the chamber.

A method for depositing a dielectric film, the method comprising:

• heating a substrate, within a chamber, to a temperature sufficient to thermally decompose an oxidizing component;
• and
• passing reaction gasses over the substrate forming a blanket dielectric deposition over substantially the entirety of at least one surface of the substrate, wherein the reaction gasses include a silicon bearing component, the oxidizing component, an ammonia component, and a chloride component, and wherein the silicon bearing component and the chloride component are included within distinct ones of the reaction gasses introduced into the chamber.

A method for depositing an oxynitride film, the method comprising:

• heating a substrate, within a chamber, to a temperature sufficient to thermally decompose an oxidizing component;
• and
• passing reaction gasses over the substrate forming a blanket dielectric deposition over substantially the entirety of at least one surface of the substrate, wherein the reaction gasses include a precursor component, the oxidizing component, an ammonia component, and a chloride component, and wherein the precursor component and the chloride component are included within distinct ones of the reaction gasses introduced into the chamber.

A method for fabricating a semiconductor device, comprising:

• heating a substrate, within a chamber;
• and
• depositing a blanket dielectric layer over substantially the entirety of the substrate by passing reaction gasses over the substrate, wherein the reaction gasses include a silicon bearing component, an oxidizing component, and a chloride component, and wherein the silicon bearing component and the chloride component are included within distinct ones of the reaction gasses introduced into the chamber.

A method for fabricating a semiconductor device, comprising:

• heating a substrate;
• and
• depositing a dielectric layer over the substrate by passing a gas flow over the substrate, wherein the gas flow includes a silicon bearing component, an oxidizing component, and a chloride component, and wherein the silicon bearing component and the chloride component are distinct from each other, wherein the semiconductor device includes one or more gates, and wherein the dielectric layer forms one or more spacers for isolating the one or more gates from one or more contacts.

A method for fabricating a semiconductor device, comprising:

• heating a substrate;
• and
• depositing a dielectric layer over the substrate by passing a gas flow over the substrate, wherein the gas flow includes a silicon bearing component, an oxidizing component, and a chloride component, and wherein the silicon bearing component and the chloride component are distinct from each other, wherein the semiconductor device includes one or more gates and one or more metal layers, and wherein the dielectric layer forms a cap over the one or more gates and the one or more metal layers.

A method for forming a dielectric structure, the method comprising:

• heating a silicon substrate, in a furnace deposition tube, to a temperature in a range of 700 degrees C. to 950 degrees C., inclusive;
• and
• thermally oxidizing at least all non-insulator portions of the surface of the silicon substrate, in the furnace tube, using gaseous reactants, which include a chloride component, dichlorosilane, and nitrous oxide, wherein the chloride component and the dichlorosilane are included in distinct gasses introduced into the furnace deposition tube.