Semiconductor device and method for manufacturing same
AssigneeNEC Electronics Corporation
InventorMakoto Yasuda
Life of this patent
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Abstract
The temperature of the sputtering process for forming the Ti film is selected to a temperature within a range of from 200 degree C. to 225 degree C. to provide stable film quality against oxidization (step 11). The irradiation with ultraviolet is conducted before applying the photo resist to reduce positive electric charge (step 12), and nitrogen plasma processing is conducted during the etching of the via hole and after the plasma stripping processing to reduce positive electric charge (steps 13 and 14), and the resistivity of the rinse liquid at the organic stripping is controlled to obtain equal to or lower than 0.3MΩ cm (step 15). Further, the RF-spattered thickness during the RF sputtering process for the barrier metal film is set to 18 nm to 22 nm to remove TiOn film (step 16).
Claims21
A method for manufacturing a semiconductor device, comprising:
- forming an aluminum film on a semiconductor substrate by a sputtering process;
- forming a titanium film on said aluminum film by a sputtering process;
- forming a titanium nitride film on said titanium film by a sputtering process;
- forming said aluminum film, said titanium film and said titanium nitride film into predetermined patterns;
- forming an inter-layer film on said titanium nitride film;
- forming a photo resist having a predetermined pattern on said inter-layer film;
- partially exposing said titanium nitride film by partially etching said inter-layer film with said photo resist used as a mask to form a via hole;
- removing said photo resist;
- and
- cleaning an interior of said via hole with a liquid chemical solution,
- wherein said partially exposing said titanium nitride film includes conducting a first nitrogen plasma process after said partially etching said inter-layer film.
A method for manufacturing a semiconductor device, comprising:
- forming an aluminum film on a semiconductor substrate by a sputtering process;
- forming a titanium film on said aluminum film by a sputtering process;
- forming a titanium nitride film on said titanium film by a sputtering process;
- forming said aluminum film, said titanium film and said titanium nitride film into predetermined patterns;
- forming an inter-layer film on said titanium nitride film;
- forming a photo resist having a predetermined pattern on said inter-layer film;
- partially exposing said titanium nitride film by partially etching said inter-layer film with said photo resist used as a mask and conducting a first nitrogen plasma processing to form a via hole;
- removing said photo resist by a plasma stripping;
- conducting a second nitrogen plasma processing after said removing said photo resist;
- and
- cleaning an interior of said via hole with a liquid chemical solution.
A method for manufacturing a semiconductor device, comprising:
- forming an aluminum film on a semiconductor substrate by a sputtering process;
- forming a titanium film on said aluminum film by a sputtering process;
- forming a titanium nitride film on said titanium film by a sputtering process;
- forming said aluminum film, said titanium film and said titanium nitride film into predetermined patterns;
- forming an inter-layer film on said titanium nitride film;
- forming a photo resist having a predetermined pattern on said inter-layer film;
- partially exposing said titanium nitride film by partially etching said inter-layer film with said photo resist used as a mask to form a via hole;
- removing said photo resist;
- and
- cleaning an interior of said via hole with a liquid chemical solution,
- wherein said sputtering process is conducted at a temperature within a range of from 200 degree C. to 225 degree C. during said forming said titanium nitride film.
A method for manufacturing a semiconductor device, comprising:
- forming an aluminum film on a semiconductor substrate;
- forming a titanium film on said aluminum film;
- forming a titanium nitride film on said titanium film;
- forming an inter-layer film on said titanium nitride film;
- forming a photo resist having a predetermined pattern on said inter-layer film;
- and
- partially exposing said titanium nitride film by partially etching said inter-layer film to form a via hole;
- wherein said partially exposing said titanium nitride film includes conducting a first nitrogen plasma process after said partially etching said inter-layer firm.
Dependencies are inferred from the claim text.