Method and apparatus for dry etching
AssigneeHitachi, Ltd.
InventorsTakao Kumihashi, Kazunori Tsujimoto, Shinichi Tachi
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Abstract
A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and second conditions include the presence or absence of a deposit film, or the presence, absence or shape of a taper angle. Various parameters for controlling the first and second conditions are contemplated.
Claims4
A method for manufacturing a semiconductor device comprising the steps of:
- providing a semiconductor body in a vacuum chamber;
- supplying an etching gas to the vacuum chamber;
- etching a layer of the semiconductor body to form a mask pattern;
- and
- overetching the layer to remove residual;
- wherein the effective exhaust speed of the vacuum chamber during the etching step is different from the elective exhaust speed during the overetching step by using a plurality of vacuum pumps connected to respectively different exhaust ports.
A method for manufacturing a semiconductor device comprising the steps of:
- providing a semiconductor body in a vacuum chamber;
- supplying an etching gas into the vacuum chamber;
- and
- selectively etching the surface of the semiconductor body in said chamber by using plasma of said etching gas, while exhausting reaction products in said chamber by using a plurality of vacuum pumps having at least 2000 1/sec exhaust speed efficiency.
Dependencies are inferred from the claim text.