Chemical mechanical polishing slurry containing abrasive particles exhibiting photocatalytic function
AssigneeKabushiki Kaisha Toshiba
InventorsYukiteru Matsui, Gaku Minamihaba, Hiroyuki Yano
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Abstract
There is provided a method of manufacturing a semiconductor device, including irradiating a chemical mechanical polishing slurry with light on applying a chemical mechanical polishing treatment using the slurry to a polishing section of a target substrate to be polished, the slurry containing a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light.
Claims22
A method of manufacturing a semiconductor device, comprising irradiating a chemical mechanical polishing slurry with light while polishing a section of a target substrate to be polished, the slurry comprising at least one mixture selected from the group consisting of:
- a mixture that comprises a dispersion medium, abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light, and resin particles dispersed in the dispersion medium;
- and
- a mixture that comprises a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light, the abrasive particles containing titanium, oxygen, and at least one element selected from the group consisting of nitrogen and sulfur.
A method of manufacturing a semiconductor device comprising applying a chemical mechanical polishing treatment to a polishing section of a target substrate to be polished by relatively moving a polishing member and the target substrate, the chemical mechanical polishing treatment comprising:
- supplying a chemical mechanical polishing slurry comprising a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light into a region between the polishing member and the target substrate;
- and
- irradiating the target substrate with light such that the slurry interposed between the polishing member and the target substrate is irradiated with light which is transmitted through the target substrate.
A method of manufacturing a semiconductor device, comprising:
- forming an insulating film provided with a recessed portion above a semiconductor substrate;
- forming a barrier layer containing tungsten nitride on the insulating film so as to cover a bottom surface and a side wall of the recessed portion;
- forming a metal layer containing copper on the barrier layer so as to fill the recessed portion with the metal layer;
- and
- applying a chemical mechanical polishing treatment to the metal layer, the chemical mechanical polishing treatment comprising:
- supplying a chemical mechanical polishing slurry;
- irradiating the slurry supplied onto the polishing member with light;
- and
- relatively moving the polishing member and the semiconductor substrate with the slurry irradiated with light interposed between the polishing member and the metal layer, wherein the slurry comprises at least one mixture selected from the group consisting of:
- a mixture that comprises a dispersion medium, abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light, and resin particles dispersed in the dispersion medium;
- and
- a mixture that comprises a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light, the abrasive particles containing titanium, oxygen, and at least one element selected from the group consisting of nitrogen and sulfur.
A method of manufacturing a semiconductor device, comprising:
- applying a chemical mechanical polishing treatment to a polishing section of a target substrate to be polished by using a chemical mechanical polishing slurry comprising a dispersion medium and abrasive particles dispersed in the dispersion medium and exhibiting a photocatalytic function upon irradiation with light;
- dissolving a polishing refuse into the dispersion medium of a waste slurry while irradiating the waste slurry with light, the polishing refuse being generated by the chemical mechanical polishing treatment and contained in the waste slurry, and the waste slurry being the chemical mechanical polishing slurry that has been used for the chemical mechanical polishing treatment;
- agglomerating the abrasive particles in the waste slurry by shielding the waste slurry from light;
- recovering the agglomerated abrasive particles from the waste slurry;
- and
- forming a regenerated slurry that is to be utilized for the chemical mechanical polishing treatment by using the recovered abrasive particles.
Dependencies are inferred from the claim text.