Method for manufacturing a semiconductor device

A method of manufacturing a semiconductor device comprising:

• forming an element isolation trench in a semiconductor substrate by using a mask member;
• coating a solution of silazane perhydrogenated polymer on a surface of said semiconductor substrate by a coating method to fill said element isolation trench with a coated film containing said silazane perhydrogenated polymer;
• evaporating a solvent contained in said coated film to convert said coated film into a polysilazane film;
• heating the polysilazane film at a temperature ranging from 200° C. to 450° C. in an atmosphere containing water vapor to provide the polysilazane film with CMP resistance;
• removing said polysilazane film deposited on said mask member by CMP, thereby permitting a surface of said mask member to expose while permitting said polysilazane film to selectively remain inside said element isolation trench;
• and
• subjecting said polysilazane film to heat treatment to form a silicon oxide film.

A method of manufacturing a semiconductor device comprising:

• peelably forming a dielectric film having a flat surface on a surface of a base film;
• forming a step portion on a surface of a semiconductor substrate;
• placing said dielectric film on said semiconductor substrate having the step portion and applying heat and pressure to said dielectric film;
• peeling said base film from said dielectric film to obtain said semiconductor substrate having said step portion buried with said dielectric film, thus forming a dielectric film having a flat surface;
• and
• subjecting said dielectric film to burning oxidation treatment in an atmosphere containing water vapor.