Method for CMP removal rate compensation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen Chuang, Vincent Chen
Life of this patent
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Abstract
A method for polishing a material layer on a semiconductor wafer to a desired target layer thickness. The method includes calculating a compensated removal rate based on the thickness of material to be removed from a material layer on the wafer according to a standard value; the current material removal rate of the CMP apparatus; and the offset thickness, which equals the difference between the thickness of the material layer which would be attained using the current material removal rate and the target thickness for the material layer. The calculated compensated removal rate is then programmed into the controller for the CMP apparatus, which polishes the material layer at the calculated compensated removal rate to achieve the desired target layer thickness for the layer.
Claims20
A method of polishing a material layer on a wafer, comprising the steps of:
- determining a non-compensated thickness to be removed from the layer;
- determining an offset thickness;
- determining a current removal rate;
- calculating a compensated removal rate using said non-compensated thickness, said offset thickness and said current removal rate;
- and
- polishing the layer according to said compensated removal rate.
A method of polishing a material layer on a wafer, comprising the steps of:
- determining a non-compensated thickness to be removed from the layer according to said a standard total wafer thickness;
- determining an offset thickness:
- determining a current removal rate;
- calculating a compensated removal rate using said non-compensated thickness, said offset thickness and said current removal rate;
- and
- polishing the layer according to said compensated removal rate.
A method of programming a CMP apparatus to polish a material layer on a wafer, comprising the steps of:
- determining a non-compensated thickness to be removed from the layer;
- determining an offset thickness;
- determining a current removal rate;
- calculating a compensated removal rate using said non-compensated thickness, said offset thickness and said current removal rate;
- programming said compensated removal rate into the CMP apparatus;
- and
- polishing the layer according to said compensated removal rate using the CMP apparatus.
Dependencies are inferred from the claim text.