Method of polishing a silicon-containing dielectric

A method of shallow trench isolation processing comprising:

• (i) providing a chemical-mechanical polishing system comprising:
• (a) about 0.5 wt. % or less of an inorganic abrasive consisting essentially of ceria having an average particle size of about 180 nm or less and a positive zeta potential,
• (b) a polishing additive bearing a functional group with a pKa of about 4 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides. thiols, salts thereof, and combinations thereof, and
• (c) a liquid carrier,
• wherein the chemical-mechanical polishing system has a pH of about 4 to about 6,
• (ii) contacting a shallow trench isolation substrate comprising a silicon dioxide layer and a silicon nitride layer with the chemical-mechanical polishing system, and
• (iii) abrading at least a portion of the substrate to polish the substrate.

A method of polishing an interlayer dielectric device or premetal dielectric device comprising

• (i) providing the chemical-mechanical polishing system comprising:
• (a) about 0.5 wt. % or less of an inorganic abrasive consisting essentially of ceria having an average particle size of about 180 nm or less and a positive zeta potential,
• (b) a polishing additive bearing a functional group with a pKa of about 4 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and
• (c) a liquid carrier,
• wherein the chemical-mechanical polishing system has a pH of about 4 to about 6,
• (ii) contacting a interlayer dielectric layer with the chemical-mechanical polishing system, and
• (iii) abrading at least a portion of the interlayer dielectric device to polishing the interlayer dielectric premetal dielectric device.

A method of polishing a substrate comprising:

• (i) contacting a substrate comprising a silicon dioxide layer and silicon nitride layer with a chemical-mechanical polishing system comprising:
• (a) water,
• (b) about 0.05 wt. % to about 0.5 wt. % inorganic abrasive suspended in the water, wherein the inorganic abrasive consists essentially of ceria having a positive zeta potential, an average primary particle size of from about 50 nm to about 150 nm and an average agglomerate particle size of about 300 nm or less, and
• (c) a polishing additive bearing a functional group with a pKa of about 4 to about 9 selected from the group consisting of 2-pyridinecarboxylic acid, pyridinedicarboxylic acids, 2-quinolinecarboxylic acid, pyrrole-2-carboxylic acid, salts thereof, and combinations thereof,
• wherein the polishing system has a pH of about 3.5 to about 5.5, and
• (ii) abrading at least a portion of the substrate to polish the substrate.