Forming of local and global wiring for semiconductor product

A method of forming different back-end-of-line (BEOL) wiring for different circuits on the same wafer, the method comprising the steps of:

• simultaneously generating back-end-of-line (BEOL) wiring over a first circuit using a dual damascene structure in a first dielectric layer, and BEOL wiring over a second circuit using a single damascene via structure in the first dielectric layer;
• and
• simultaneously generating BEOL wiring over the first circuit using a dual damascene structure in a second dielectric layer, and BEOL wiring over the second circuit using a single damascene line wire structure in the second dielectric layer,
• wherein the single damascene via structure has a width approximately twice that of a via portion of the dual damascene structures and the single damascene line wire structure has a width approximately twice that of a line wire portion of the dual damascene structures.

A semiconductor product comprising a first circuit and a second circuit, the product comprising:

• a first dual damascene metal structure in a first back-end-of-line (BEOL) dielectric layer over the first circuit, the first dual damascene metal structure having a via opening width;
• a single damascene metal via structure in the first BEOL dielectric layer and over the second circuit, the single damascene metal via structure having a width approximately twice that of the via opening width;
• a second dual damascene metal structure in a second BEOL dielectric layer over the first BEOL layer and over the first circuit, the second dual damascene metal structure having a line wire opening width;
• and
• a single damascene metal line wire structure connected to the single damascene metal via structure over the second circuit, the single damascene metal line wire structure having a width approximately twice that of the first line wire opening width.