# US 7,071,096 B2 · Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter deposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,071,096 B2 - Document ID: US7071096B2 - Status: Granted - Kind: B2 - Application number: 11/039,103 - Filed: 2005-01-20 - Published: 2005-10-20 - Granted: 2006-07-04 - Earliest claimed: 2004-03-31 - Assignees: Advanced Micro Devices, Inc. - Inventors: Michael Friedemann; Volker Kahlert - Web page: https://patentgrep.com/patent/US7071096B2 ## CPC - H10W 20/033: {in openings in dielectrics} - H10P 14/44: Physical vapour deposition [PVD] - H10W 20/0523: {by irradiating with ultraviolet or particle radiation} - H10W 20/054: {by selectively removing parts thereof (H10W20/034 takes precedence)} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract In forming a thin conductive layer in an interconnect structure by sputter deposition including a re-sputtering step, a flash deposition step is performed after the re-sputtering step to provide a sufficient layer thickness at critical locations, such as at positions of structure irregularities. The flash deposition step may be performed for a fixed process time so that less effort in process control is required while, at the same time, an increased reliability may be obtained compared to conventional approaches without a flash deposition. ## Claims ### Claim 1 A method, comprising: sputter depositing a layer of conductive material within an opening formed in a dielectric layer; re-sputtering a portion of said conductive material deposited within said opening; sputter depositing additional portions of said conductive material within said opening; and performing at least one additional re-sputtering process after the process of sputter depositing said additional portions of said conductive material within said opening. ### Claim 2 (depends on 1) The method of claim 1, wherein sputter depositing additional portions of said conductive material is performed for a predefined time period. ### Claim 3 (depends on 2) The method of claim 2, wherein said predefined time period ranges from approximately 1–5 seconds. ### Claim 4 (depends on 1) The method of claim 1, wherein re-sputtering a portion of said conductive material is performed in a sputter ambient of a first state and sputter depositing said additional portions of said conductive material is performed in said sputter ambient being in a second state, a bias power of said second state being lower than a bias power of said first state. ### Claim 5 (depends on 4) The method of claim 4, wherein a pressure in said sputter ambient in the first state is higher than a pressure of said second state. ### Claim 6 (depends on 1) The method of claim 1, further comprising controlling at least one process parameter of a sputter ambient during the sputter deposition of said additional portions of said conductive material to adjust a deposition non-uniformity of said conductive material in said opening. ### Claim 7 (depends on 1) The method of claim 1, further comprising controlling at least one process parameter of a sputter ambient during the sputter deposition of said additional portions of said conductive material to adjust a deposition rate for depositing said additional portions of said conductive material. ### Claim 8 (depends on 1) The method of claim 1, wherein said conductive material comprises at least one of tantalum and tantalum nitride. ### Claim 9 (depends on 1) The method of claim 1, wherein said conductive material comprises copper. ### Claim 10 (depends on 1) The method of claim 1, wherein process parameters for sputter depositing said conductive material are substantially the same as for sputter depositing said additional portions of said conductive material. ### Claim 11 A method of controlling a degree of coverage of an interconnect structure, the method comprising: providing a substrate having formed therein at least one interconnect structure including vias and trenches; forming a layer of conductive material above said interconnect structure by a re-sputter deposition technique; sputter depositing said conductive material in a final flash based on at least one specified process parameter; determining a thickness of said conductive material at a critical position in said interconnect structure; determining a desired value of said at least one specified process parameter on the basis of said determined thickness; and forming a layer of said conductive material on one or more substrates while using said desired value in said final flash of sputter deposition. ### Claim 12 (depends on 11) The method of claim 11, wherein said thickness of said conductive material is determined on the basis of a plurality of different parameter settings of said at least one specified process parameter. ### Claim 13 (depends on 11) The method of claim 11, wherein said at least one specified process parameter represents at least one of a bias power, a pressure of a deposition ambient during said final flash and a deposition time of said final flash. ### Claim 14 A method, comprising: sputter depositing a layer of conductive material within an opening formed in a dielectric layer; re-sputtering with a first bias power a portion of said conductive material deposited within said opening; sputter depositing additional portions of said conductive material within said opening with a second bias power for a fixed deposition time, said second bias power being less than said first bias power; and performing at least one additional re-sputtenng process after the process of sputter depositing said additional portions of said conductive material within said opening. ### Claim 15 (depends on 14) The method of claim 14, wherein said fixed deposition time is in the range of approximately 1–5 seconds. ### Claim 16 (depends on 14) The method of claim 14, wherein a pressure during sputter depositing said additional portions is equal to or lower than a pressure during re-sputtering a portion of said conductive material. ### Claim 17 (depends on 14) The method of claim 14, further comprising controlling at least one process parameter of a sputter ambient during the sputter deposition of said additional portions to adjust a deposition non-uniformity of said conductive material in said opening. ### Claim 18 (depends on 14) The method of claim 14, further comprising controlling at least one process parameter of a sputter ambient during the sputter deposition of said additional portions to adjust a deposition rate for depositing said additional portions. ### Claim 19 (depends on 14) The method of claim 14, wherein said conductive material comprises at least one of tantalum and tantalum nitride. ### Claim 20 (depends on 14) The method of claim 14, wherein said conductive material comprises copper. ### Claim 21 (depends on 14) The method of claim 14, wherein process parameters for sputter depositing said conductive material are substantially the same as for sputter depositing said additional portions. ### Claim 22 A method of sputter depositing a conductive material over an interconnect structure, the method comprising: sputter depositing a first layer of said conductive material; performing a sequence including re-sputtering a portion of said conductive material and depositing a second layer of said conductive material, said sequence being a non-final sequence of sputter depositing said conductive material; and performing a second sequence including re-sputtering a portion of said second layer of said conductive material and depositing a further layer of said conductive material. ### Claim 23 (depends on 22) The method of claim 22, further comprising performing at least one re-sputter process after performing said sequence. ### Claim 24 (depends on 22) The method of claim 22, wherein depositing of said second layer during said sequence is performed for a predefined time period. ### Claim 25 (depends on 24) The method of claim 24, wherein said predefined time period is in the range of approximately 1–5 seconds. ### Claim 26 (depends on 22) The method of claim 22, wherein a pressure during depositing said second layer is equal to or lower than a pressure during re-sputtering a portion of said conductive material. ### Claim 27 (depends on 22) The method of claim 22, wherein a bias power supplied to a deposition ambient during depositing said second layer is lower than a bias power supplied during re-sputtering a portion of said conductive material.