# US 7,071,095 B2 · Barrier metal re-distribution process for resistivity reduction

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,071,095 B2
- Document ID: US7071095B2
- Status: Granted
- Kind: B2
- Application number: 10/850,763
- Filed: 2004-05-20
- Published: 2005-11-24
- Granted: 2006-07-04
- Earliest claimed: 2004-05-20
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Cheng-Lin Huang; Ching-Hua Hsieh; Shau-Lin Shue
- Web page: https://patentgrep.com/patent/US7071095B2

## CPC

- H10W 20/054: {by selectively removing parts thereof (H10W20/034 takes precedence)}
- H10P 14/44: Physical vapour deposition [PVD]
- H10P 50/262: {by physical means only}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/0523: {by irradiating with ultraviolet or particle radiation}
- H10P 70/12: {by dry cleaning only (H10P70/52 takes precedence)}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.

## Claims

### Claim 1

A process for re-distributing a barrier layer, comprising the steps of:
providing a substrate having a contact opening structure and a metal barrier layer deposited in said contact opening structure; and
re-sputtering said barrier layer by bombarding said barrier layer with pure argon without metal ion bombardment; and
re-sputtering the resultant barrier layer by providing a metal target and bombarding said barrier layer with argon and metal ions from said metal target.

### Claim 2 (depends on 1)

The process of claim 1, wherein said metal barrier layer is tantalum and said metal ions are tantalum ions.

### Claim 3 (depends on 1)

The process of claim 1 wherein said contact opening structure is a dual damascene structure.

### Claim 4 (depends on 3)

The process of claim 3 wherein said metal barrier layer is tantalum and said metal ions are tantalum ions.

### Claim 5 (depends on 1)

The process of claim 1 wherein said metal barrier layer is titanium and said metal ions are titanium ions.

### Claim 6 (depends on 5)

The process of claim 5 wherein said contact opening structure is a dual damascene structure.

### Claim 7 (depends on 1)

The process of claim 1 wherein said barrier layer has a thickness of from about 25 angstroms to about 650 angstroms.

### Claim 8 (depends on 7)

The process of claim 7 wherein said metal barrier layer is tantalum and said metal ions are tantalum ions.

### Claim 9 (depends on 7)

The process of claim 7 wherein contact opening structure is a dual damascene structure.

### Claim 10 (depends on 9)

The process of claim 9 wherein said metal barrier layer is tantalum and said metal ions are fantalum ions.

### Claim 11 (depends on 7)

The process of claim 7 wherein said metal barrier layer is titanium and said metal ions are titanium ions.

### Claim 12 (depends on 11)

The process of claim 11 wherein said contact opening structure is a dual damascene structure.

### Claim 13

A process for re-distributing a barrier layer, comprising the steps of
providing a substrate having a contact opening structure and a metal barrier layer deposited in said contact opening structure;
providing a process chamber comprising a source DC supply;
placing said substrate in said process chamber;
re-sputtering said barrier layer by providing a metal target and bombarding said barrier layer with argon ions and metal ions from said metal target with said source DC supply on; and
re-sputtering said barrier layer by bombarding the resultant barrier layer with argon ions without metal ion bombardment with said source DC supply off.

### Claim 14 (depends on 13)

The process of claim 13 wherein said metal barrier layer is tantalum and said metal ions are tantalum ions.

### Claim 15 (depends on 13)

The process of claim 13 wherein said metal barrier layer is titanium and said metal ions are titanium ions.

### Claim 16 (depends on 13)

The process of claim 13 wherein said contact opening structure is a duel damascene structure.