# US 7,071,069 B2 · Shallow amorphizing implant for gettering of deep secondary end of range defects

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- Number: US 7,071,069 B2
- Document ID: US7071069B2
- Status: Granted
- Kind: B2
- Application number: 10/743,247
- Filed: 2003-12-22
- Published: 2005-06-23
- Granted: 2006-07-04
- Earliest claimed: 2003-12-22
- Assignees: Chartered Semiconductor Manufacturing Ltd.
- Inventors: Chung Foong Tan; Hyeokjae Lee; Eng Fong Chor; Elgin Quek
- Web page: https://patentgrep.com/patent/US7071069B2

## CPC

- H10P 30/21: {of electrically active species}
- H10D 30/0227: {having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET}
- H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}
- H10P 30/204: {into Group IV semiconductors}
- H10P 30/28: characterised by an annealing step, e.g. for activation of dopants
- H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers}
- H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A pocket implant process to reduce defects. We provide a gate structure, on a semiconductor substrate doped with a first conductivity type dopant. We perform a pocket amorphizing implantation procedure to form a pocket implant region adjacent to the gate structure, and an amorphous pocket region. Next, we perform a shallow amorphizing implant to form an amorphous shallow implant region. The amorphous shallow implant region being formed at a second depth above the amorphous pocket region. The substrate above the amorphous shallow implant region preferably remains crystalline. We perform a S/D implant procedure to form Deep S/D regions. We perform an anneal procedure preferably comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and the amorphous pocket region, The defects created by the pocket implant are reduced by the shallow amorphous implant.

## Claims

### Claim 1

A method for forming an amorphous shallow implant region that getters defects from a pocket implantation; comprising:
a) providing a gate structure, on a substrate comprised with a first conductivity type dopant; said substrate comprised of an upper crystalline section;
b) performing a pocket amorphizing implantation procedure to implant ions of a first conductivity type to form a pocket implant region adjacent to said gate structure, and an amorphous pocket region;
(1) said amorphous pocket region is formed at a first depth below the substrate surface;
c) performing a shallow amorphizing implant to form an amorphous shallow implant region;
(1) said amorphous shallow implant region being formed at a second depth above said amorphous pocket region;
d) performing an anneal procedure to recrystalize the amorphous shallow implant region and said amorphous pocket region, whereby said amorphous shallow implant region reduces defects formed by the pocket amorphizing implant.

### Claim 2 (depends on 1)

The method of claim 1 wherein the anneal procedure is comprised of a first soak step and a second spike step.

### Claim 3 (depends on 1)

The method of claim 1 wherein said amorphous pocket region is formed at a depth between 40 and 100 nm; said amorphous pocket region has a thickness between 10 and 20nm;
and the substrate above the amorphous pocket region remains crystalline.

### Claim 4 (depends on 1)

The method of claim 1 wherein the pocket amorphizing implantation comprises implanting Sb or In species at an energy between 115 and 150 keV using a quad implant at a 45 degree angle to form a pocket implant to a depth between 40 and 100 nm.

### Claim 5 (depends on 1)

The method of claim 1 wherein the shallow amorphizing implant comprises: implanting As, Si or Ge species at a dose between 5E13cm−2and 7E14cm−2 and at an energy between 5 and 10 keV, and at a 7 degree and a quad twist; said first conductivity type is N-type and said second conductivity type is p-type.

### Claim 6 (depends on 1)

The method of claim 1 wherein said amorphous shallow implant region is formed at a minimum depth of about 8 nm and a maximum depth of 20 nm below the substrate surface; said amorphous shallow implant region has a thickness between 5 and 10 nm.

### Claim 7 (depends on 1)

The method of claim 1 wherein the anneal procedure comprises: (1) a soak step at a temperature between 600 and 800° C. for a time between 10 and 30 seconds and (2) a spike step where the temperature ramps up to a peak temperature between 1000 and 1100° C. and a ramp down from said peak temperature to a temperature below 800° C.; said ramp up end ramp down have a rate between 200 and 300 degree °C. per minute.

### Claim 8 (depends on 1)

The method of claim 1 wherein said amorphous shallow implant region is not a halo region.

### Claim 9 (depends on 1)

The method of claim 1 wherein said wherein the shallow amorphizing implant comprises: implanting As, Si, or Ge species; said first conductivity type is p-type and said second conductivity type is n-type.

### Claim 10 (depends on 1)

The method of claim 1 wherein said wherein the shallow amorphizing implant comprises: implanting Si, or Ge species.

### Claim 11

A method for forming an amorphous shallow implant region that getters defects from a pocket implantation; comprising:
a) providing a gate structure, on a substrate comprised with a first conductivity type dopant said substrate comprised of an upper crystalline section;
b) performing a pocket amorphizing implantation procedure to implant ions of a first conductivity type to form a pocket implant region adjacent to said gate structure and an amorphous pocket region;
(1) said amorphous pocket region is formed at a first depth below the substrate surface;
c) performing a shallow amorphizing implant to form an amorphous shallow implant region; the shallow amorphizing implant comprises: implanting ions of Si, As, or Ge species;
(1) said amorphous shallow implant region being formed at a second depth above said amorphous pocket region;
d) performing a SDF, implant to form SDE regions of a second conductivity type using said gate structure as a mask;
e) performing a source/drain implant procedure to form deep source/drain regions;
f) performing an anneal procedure to recrystalize the amorphous shallow implant region and said amorphous pocket region, whereby said amorphous shallow implant region reduces defects formed by the pocket amorphizing implant.

### Claim 12 (depends on 11)

The method of claim 11 wherein the anneal procedure is comprised of a first soak step and a second spike step.

### Claim 13 (depends on 11)

The method of claim 11 wherein said amorphous pocket region is formed at a depth between 40 and 100 nm; said amorphous pocket region has a thickness between 10 and 20 nm;
and the substrate above the amorphous pocket region remains crystalline.

### Claim 14 (depends on 11)

The method of claim 11 wherein the pocket amorphizing implantation comprises implanting Sb or In species at an energy between 115 and 150 keV using a quad implant at a 45 degree angle to form a pocket implant to a depth between 40 and 100 nm.

### Claim 15 (depends on 11)

The method of claim 11 wherein the shallow amorphizing implant comprises: implanting As, Si, or Ge species at a dose between 5E13cm−2 and 7E14 cm−2 and at an energy between 5 and 10 keV, and at a 7 degree and a quad twist.

### Claim 16 (depends on 11)

The method of claim 11 wherein said amorphous shallow implant region is formed at a minimum depth of about 8 nm and a maximum depth of 20 nm below the substrate surface; said amorphous shallow implant region has a thickness between 5 and 10 nm.

### Claim 17 (depends on 11)

The method of claim 11 wherein said amorphous shallow implant region has a thickness between 5 and 10 mm.

### Claim 18 (depends on 11)

The method of claim 11 wherein the S/D implant procedure comprises: implanting As ions at a dose of between 5E13 and 7E14 atoms/sq-cm; an energy between 5 and 10 keV and a maximum depth between 30 and 50 nm.

### Claim 19 (depends on 11)

The method of claim 11 wherein the anneal procedure comprises: (1) a soak step at a temperature between 600 and 800° C. for a time between 10 and 30 seconds and (2) a spike step where the temperature ramps up to a peak temperature between 1000 and 1100° C. and a ramp down from said peak temperature to a temperature below 800° C.; said ramp up and ramp down have a rate between 200 and 300 degree ° C. per minute.

### Claim 20

A method of for a pocket implant comprising:
a) providing a gate structure on a semiconductor substrate comprised with a first conductivity type dopant;
b) performing a pocket amorphizing implantation procedure to implant ions of a first conductivity type to form a pocket implant region adjacent to said gate structure, an amorphous pocket region and pocket interstitials under the amorphous pocket region;
c) performing a shallow amorphizing implant to form an amorphous shallow implant region and shallow implant interstitials; the amorphous shallow implant region being formed at a second depth above said amorphous pocket region;
the substrate above the amorphous shallow implant region remains crystalline;
(1) said amorphous shallow implant region is formed at a minimum depth of about 8 nm and a maximum depth of 20 nm below the substrate surface; said amorphous shallow implant region has a thickness between 5 and 10 nm;
d) performing a SDE implant to form SDE regions of a second conductivity type, in an area of said semiconductor substrate not covered by said gate structure, with said SDE regions located in a top portion of said pocket region;
e) forming spacers on the sidewalls of the gate structure;
f) performing a S/D implant procedure to form Deep S/D regions;
g) performing an anneal procedure comprised of a first soak step and a second spike step to recrystalilze the amorphous shallow implant region and said amorphous pocket region; whereby said shallow amorphous implant region reduces the defects from the pocket implantation.

### Claim 21 (depends on 20)

The method of claim 20 wherein the pocket amorphizing implantation comprises implanting Sb or In species at an Energy between 115–150 keV using a quad implant at a 45 degree angle to form a pocket implant region to a depth between 40 and 100 nm.

### Claim 22 (depends on 20)

The method of claim 20 wherein said amorphous pocket region is formed at a depth range between 40 and 100 nm; said amorphous pocket region has a thickness between 10 and 20 nm; the substrate above the amorphous pocket region remains crystalline.

### Claim 23 (depends on 20)

The method of claim 20 wherein the shallow amorphizing implant comprises: implanting As, Si, or Ge species at a dose greater than 5E13cm−2 and at an energy between 5 and 10 keV, and at a 7 degree and a quad twist.

### Claim 24 (depends on 20)

The method of claim 20 wherein said wherein the shallow amorphizing implant comprises: implanting Si, Ge or As species.