Fabrication of integrated devices using nitrogen implantation

A process of forming a gate structure on a semiconductor wafer comprising the steps of:

• providing a semiconductor substrate having a channel region formed therein so as to define a source region and a drain region and a gate structure comprised of an isolation layer positioned on said channel region and a conductive layer positioned on said isolation layer;
• implanting nitrogen into said source and drain regions;
• oxidizing a portion of said conductive layer adjacent said implanted source and drain regions to form an oxide spacer and a protective layer over said source and drain regions, said protective layer comprising said nitrogen and characterized by a dielectric constant higher than that of silicon oxide.

A process of eliminating hot electron injection into a gate electrode positioned on a gate oxide adjacent a channel interposed between a source and a drain region in a silicon substrate, the process comprising:

• forming a nitrogen doped region in said source and drain regions by nitrogen implantation;
• and
• forming a silicon nitride film over a portion of said gate electrode so that a portion of said silicon nitride film penetrates under said gate electrode during said forming step wherein said portion of said silicon nitride film prevents hot electron injection into said gate electrode, wherein forming said silicon nitride film includes conducting a source/drain reoxidation after forming said nitrogen doped region.