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US 7,071,059 B1Granted
Method for forming recess gate of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorHyung Ki Kim
Life of this patent
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Abstract
A method for forming a recess gate of a semiconductor device is disclosed. The method for forming a recess gate of a semiconductor device comprises forming a polysilicon layer pattern covering a contact region on a semiconductor substrate, etching a predetermined thickness of the semiconductor substrate in the active region using the polysilicon layer pattern as an etching mask to form a recess gate region, and forming and patterning the gate polysilicon layer, the gate conductive layer and the gate hard mask layer to form a recess gate.
Claims3
A method for forming a recess gate of a semiconductor device, comprising the steps of:
- (a) forming a polysilicon layer pattern on a semiconductor substrate having an active region, the polysilicon layer pattern covering a contact region;
- (b) forming an insulating film covering the polysilicon layer pattern;
- (c) etching a predetermined thickness of the semiconductor substrate using the polysilicon layer pattern as an etching mask to form a recess gate region in the active region;
- (d) forming a planarized gate polysilicon layer at least filling up the recess gate region;
- (e) depositing a gate conductive layer and a gate hard mask layer on the gate polysilicon layer to form a stacked structure of the gate polysilicon layer, the gate conductive layer and the gate hard mask layer;
- (f) etching the stacked structure to form a gate structure, whereby the insulating film is exposed;
- (g) forming a spacer on a top surface and a sidewall of the gate structure;
- (h) removing the exposed insulating film to expose the polysilicon layer pattern;
- and
- (i) depositing a polysilicon film on the exposed polysilicon layer pattern in the contact region to form a landing plug.
7 more elements
Dependencies are inferred from the claim text.