Method of fabricating silicon integrated circuit on glass
AssigneeSharp Laboratories of America, Inc.
InventorsJer-Shen Maa, Sheng Teng Hsu, Jong-Jan Lee, Douglas J. Tweet
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Abstract
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a heat pad material; activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate; removing the heat pad material; and completing the silicon integrated circuit.
Claims17
A method of fabricating a silicon integrated circuit on a glass substrate, comprising:
- preparing a glass substrate;
- fabricating a silicon layer on the glass substrate;
- implanting ions into the active areas of the silicon layer;
- covering the silicon layer with a germanium heat pad material;
- activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate;
- removing the heat pad material;
- and
- completing the silicon integrated circuit.
A method of fabricating a silicon integrated circuit on a glass substrate, comprising:
- preparing a glass substrate;
- fabricating a silicon layer on the glass substrate;
- implanting ions into the active areas of the silicon layer;
- covering the silicon layer with a germanium heat pad material;
- activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate, including annealing in an RTA chamber and heating the heat pad material by light energy to keep the temperature of the glass substrate below a temperature of about 650° C.;
- removing the heat pad material;
- and
- completing the silicon integrated circuit.
A method of fabricating a silicon integrated circuit on a glass substrate, comprising:
- preparing a glass substrate;
- depositing a layer of silicon oxide on the glass substrate;
- bonding a silicon thin film layer to the silicon oxide layer on the glass substrate;
- removing a portion of the silicon layer over field regions of the integrated circuit device;
- isolating active device areas;
- implanting ions into a channel region of the integrated circuit device;
- oxidizing a gate region of the integrated circuit device;
- forming a gate sidewall structure;
- forming a gate electrode within the gate sidewall structure;
- implanting ions into the active areas of the silicon layer;
- covering the silicon layer with a germanium heat pad layer;
- activating the ions in the silicon layer by annealing while maintaining the glass substrate at a temperature below that of the thermal stability of the glass substrate by transferring heat from the germanium heat pad layer into the silicon layer;
- removing the heat pad material;
- and
- completing the silicon integrated circuit.
Dependencies are inferred from the claim text.