# US 7,071,041 B2 · Method of manufacturing a semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,071,041 B2 - Document ID: US7071041B2 - Status: Granted - Kind: B2 - Application number: 09/761,641 - Filed: 2001-01-18 - Published: 2001-10-25 - Granted: 2006-07-04 - Earliest claimed: 2000-01-20 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Hisashi Ohtani; Hideto Ohnuma - Web page: https://patentgrep.com/patent/US7071041B2 ## CPC - H10D 86/021: {of multiple TFTs} - H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS ## Abstract There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultaneously added with the impurity ions at the time of doping. ## Claims ### Claim 1 A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; and ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of carbon is at 3×1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. ### Claim 2 A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of nitrogen is at 1×1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. ### Claim 3 A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; and ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of oxygen is at 3×1017 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. ### Claim 4 (depends on 1) A method of manufacturing a semiconductor device according to claim 1, wherein said semiconductor film is used as at least a channel forming region of a TFT. ### Claim 5 (depends on 1) A method of manufacturing a semiconductor device according to claim 1, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. ### Claim 6 (depends on 1) A method of manufacturing a semiconductor device according to claim 1, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. ### Claim 7 (depends on 1) A method for fabricating a semiconductor device according to claim 1, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5% to 5%. ### Claim 8 (depends on 1, 2, 3) A method of manufacturing a semiconductor device according to any one of claims 1 to 3, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5% to 1%. ### Claim 9 (depends on 1) A method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. ### Claim 10 (depends on 1) A method according to claim 1, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1×1019 atoms/cm3 or less. ### Claim 11 A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein a concentration of hydrogen is at 1×1019 atoms/cm3 or less in said semiconductor film after the step, wherein no mass separation is performed in the ion-doping step, and wherein said impurity element is doped into the semiconductor film by employing a source material gas comprising said impurity element diluted with hydrogen at a concentration in the range of 0.5% to 5%. ### Claim 12 A method of manufacturing a semiconductor device comprising the step of: forming a semiconductor film having an amorphous structure over a substrate; crystallizing the semiconductor film; forming an insulating film over the semiconductor film; ion-doping an impurity element into a channel region of the semiconductor film through the insulating film, wherein said impurity element imparts n-type conductivity or p-type conductivity to said semiconductor film, wherein said impurity element is doped into said semiconductor film by using a source material gas containing said impurity element diluted with hydrogen to the concentration in the range from 0.5% to 5%, and wherein no mass separation is performed in the ion-doping step. ### Claim 13 (depends on 2) A method of manufacturing a semiconductor device according to claim 2, wherein said semiconductor film is used as at least a channel forming region of TFT. ### Claim 14 (depends on 3) A method of manufacturing a semiconductor device according to claim 3, wherein said semiconductor film is used as at least a channel forming region of TFT. ### Claim 15 (depends on 11) A method of manufacturing a semiconductor device according to claim 11, wherein said semiconductor film is used as at least a channel forming region of TFT. ### Claim 16 (depends on 12) A method of manufacturing a semiconductor device according to claim 12, wherein said semiconductor film is used as at least a channel forming region of TFT. ### Claim 17 (depends on 2) A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. ### Claim 18 (depends on 3) A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. ### Claim 19 (depends on 11) A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. ### Claim 20 (depends on 12) A method of manufacturing a semiconductor device according to claim 12, wherein said impurity element imparting p-type conductivity comprises a gas containing diborane, BF2, or boron. ### Claim 21 (depends on 2) A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. ### Claim 22 (depends on 3) A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. ### Claim 23 (depends on 11) A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. ### Claim 24 (depends on 12) A method of manufacturing a semiconductor device according to claim 12, wherein said impurity element imparting n-type conductivity comprises either one of a gas containing P or As, and phosphine. ### Claim 25 (depends on 2) A method for fabricating a semiconductor device according to claim 2, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. ### Claim 26 (depends on 3) A method for fabricating a semiconductor device according to claim 3, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. ### Claim 27 (depends on 11) A method for fabricating a semiconductor device according to claim 11, wherein the impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 5%. ### Claim 28 (depends on 2) A method of manufacturing a semiconductor device according to claim 2, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. ### Claim 29 (depends on 3) A method of manufacturing a semiconductor device according to claim 3, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. ### Claim 30 (depends on 11) A method of manufacturing a semiconductor device according to claim 11, wherein said impurity element imparting p-type conductivity is doped into the semiconductor film by employing a source material gas that contains diborane diluted with hydrogen to the concentration in the range from 0.5 to 1%. ### Claim 31 (depends on 2) A method of manufacturing a semiconductor device according to claim 2, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. ### Claim 32 (depends on 3) A method of manufacturing a semiconductor device according to claim 3, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. ### Claim 33 (depends on 11) A method of manufacturing a semiconductor device according to claim 11, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. ### Claim 34 (depends on 12) A method of manufacturing a semiconductor device according to claim 12, wherein the semiconductor device is one selected form the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital video disk player, an electronic amusement apparatus, and a projector. ### Claim 35 (depends on 2) A method according to claim 2, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1×1019 atoms/cm3 or less. ### Claim 36 (depends on 3) A method according to claim 3, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1×1019 atoms/cm3 or less. ### Claim 37 (depends on 12) A method according to claim 12, wherein the concentration of hydrogen to be ion-doped simultaneously with said impurity element in said semiconductor film is set to be at 1×1019 atoms/cm3 or less. ### Claim 38 (depends on 1) A method according to claim 1, wherein said ion-doping is performed through the insulating film. ### Claim 39 (depends on 2) A method according to claim 2, wherein said ion-doping is performed through the insulating film. ### Claim 40 (depends on 3) A method according to claim 3, wherein said ion-doping is performed through the insulating film. ### Claim 41 (depends on 11) A method according to claim 11, wherein said ion-doping is performed through the insulating film. ### Claim 42 (depends on 12) A method according to claim 12, wherein said ion-doping is performed through the insulating film.