Method of forming a semiconductor device having a dielectric layer with high dielectric constant

A method for forming a semiconductor device, comprising:

• providing a silicon substrate;
• forming an interfacial layer over the silicon substrate;
• forming a hafnium oxide layer over the interfacial layer;
• etching the hafnium oxide layer to thin the hafnium oxide layer and form a thinned hafnium oxide layers;
• forming a conductive layer overlying the thinned hafnium oxide layer;
• and
• patterning and etching the interfacial layer, the thinned hafnium oxide layer, and the conductive layer to form a gate stack for a semiconductor device.

A method for forming a semiconductor device, comprising:

• providing a semiconductor substrate;
• forming an interfacial layer over the semiconductor substrate, the interfacial layer having a thickness in a range of approximately 0.3 to 1.2 nanometers;
• forming a dielectric layer over the interfacial layer, wherein the dielectric layer has a high dielectric constant (K) and a thickness of at least approximately 5 nanometers;
• thinning the dielectric layer to a thickness of at most approximately 3 nanometers to form a thinned dielectric layer,
• forming a conductive layer overlying the thinned dielectric layer;
• and
• patterning and etching the interfacial layer, the thinned dielectric layer, and the conductive layer to form a gate stack for a semiconductor device.