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US 7,071,034 B2Granted
Method of making semiconductor device
AssigneeRohm Co., Ltd.
InventorsTakashi Ueda, Kiyohiro Isogawa
Life of this patent
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Abstract
A semiconductor device includes a first lead having an inner portion on which a semiconductor chip is mounted, a second lead having an inner portion electrically connected to the semiconductor chip via a wire and a resin package for sealing the semiconductor chip and the wire. The inner portions, the semiconductor chip and the wire are coated with a coating film formed of amorphous fluororesin.
Claims5
A method of making a semiconductor device comprising the steps of:
- mounting a light emitting or receiving semiconductor chip on an inner portion of a first lead;
- electrically connecting the semiconductor chip to an inner portion of a second lead;
- coating at least the semiconductor chip with a coating film formed of amorphous fluororesin, the coating film having a thickness of 5–50 μm;
- and
- molding a resin package for sealing the semiconductor chip together with the inner portions of the first and second leads;
- wherein the coating and molding steps are performed in a manner such that the coating film is entirely spaced from all outer surfaces of the resin package.
3 more elements
Dependencies are inferred from the claim text.