# US 7,071,029 B2 · Methods for fabricating final substrates

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- Number: US 7,071,029 B2
- Document ID: US7071029B2
- Status: Granted
- Kind: B2
- Application number: 11/009,138
- Filed: 2004-12-13
- Published: 2005-05-12
- Granted: 2006-07-04
- Earliest claimed: 2000-11-27
- Assignees: S.O.I.Tec Silicon on Insulator Technologies
- Inventors: Bruno Ghyselen; Fabrice Letertre
- Web page: https://patentgrep.com/patent/US7071029B2

## CPC

- H10P 90/1916: {with separation or delamination along an ion implanted layer, e.g. Smart-cut}
- H10D 62/82: Heterojunctions
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10P 14/6905: {being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 90/1904: {Preparing vertically inhomogeneous wafers}
- H10P 90/22: {by transferring layers from a donor substrate to a final substrate utilising a temporary handle substrate as an intermediary}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10D 62/8325: {Silicon carbide}
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- Y10T 428/24479: including variation in thickness
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.

## Claims

### Claim 1

A method of fabricating a final substrate for use in optics, electronics, or optoelectronics which comprises: forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; transferring the transfer layer onto an intermediate support; and depositing a support material on the useful layer after the transfer layer is transferred onto the intermediate support to form the final substrate, wherein the useful layer is deposited on the transfer layer after detaching the transfer layer from the source substrate.

### Claim 2 (depends on 1)

The method of claim 1, wherein the zone of weakness is formed by implanting atomic species into the source substrate.

### Claim 3 (depends on 1)

The method of claim 1, wherein the transfer layer is a relatively thin layer of a monocrystalline material and the support material is a relatively thick layer.

### Claim 4 (depends on 1)

The method of claim 1, wherein the support material is progressively deposited on the useful layer using at least one of chemical vapor deposition, liquid deposition, or molecular beam deposition.

### Claim 5 (depends on 1)

The method of claim 1, wherein the useful layer is made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride.

### Claim 6 (depends on 1)

The method of claim 1, wherein the useful layer is made of compounds of at least two elements including at least one element of aluminum, indium, and gallium.

### Claim 7 (depends on 1)

The method of claim 1, wherein the support material is made of at least one of monocrystalline materials, polycrystalline materials, amorphous materials, materials comprising a plurality of phases, and materials that are less expensive than that of the transfer layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the transfer layer is made of at least one of silicon (1,1,1,), silicon carbide, a monocrystalline material, sapphire, diamond, gallium nitride, aluminum nitride, or a combination of at least two of these materials.

### Claim 9 (depends on 1)

The method of claim 1, wherein the support material is made of at least one of silicon, silicon carbide, sapphire, diamond, graphite, gallium nitride, aluminum nitride, or a combination of at least two of these materials.

### Claim 10 (depends on 1)

The method of claim 1, which further comprises optimizing the conditions under which the support material is deposited so that the support material exhibits at least one of monocrystalline quality, polycrystalline quality, an insulating quality, or a conductive quality.

### Claim 11 (depends on 1)

The method of claim 1, wherein the useful layer is deposited on the transfer layer after the transfer layer is transferred onto the intermediate support.

### Claim 12

A method of fabricating a final substrate for use in optics, electronics, or optoelectronics which comprises: forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; transferring the transfer layer onto an intermediate support; and depositing a support material on the useful layer after the transfer layer is transferred onto the intermediate support to form the final substrate, wherein the intermediate support includes a plurality of transfer layers.

### Claim 13

A method of fabricating a final substrate for use in optics, electronics, or optoelectronics which comprises: forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; transferring the transfer layer onto an intermediate support; and depositing a support material on the useful layer after the transfer layer is transferred onto the intermediate support to form the final substrate, and eliminating the intermediate support so that it is not present in the final substrate.

### Claim 14 (depends on 13)

The method of claim 13, eliminating the transfer layer so that it is not present in the final substrate.

### Claim 15

A method of fabricating a final substrate for use in optics, electronics, or optoelectronics which comprises: forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; forming a bonding layer on the intermediate support or the transfer layer; subsequently transferring the transfer layer onto an intermediate support; and depositing a support material on the useful layer after the transfer layer is transferred onto the intermediate support to form the final substrate.

### Claim 16 (depends on 15)

The method of claim 15, which further comprises forming a bonding layer on the intermediate support before transferring the transfer layer thereto.

### Claim 17 (depends on 16)

The method of claim 16, wherein the bonding layer is made of at least one of amorphous materials, polycrystalline materials, and metallic materials.

### Claim 18 (depends on 15)

The method of claim 15, which further comprises forming a bonding layer on the transfer layer before it is detached from the source substrate.

### Claim 19 (depends on 18)

The method of claim 18, wherein the bonding layer is made of at least one of amorphous materials, polycrystalline materials, and metallic materials.