# US 7,071,022 B2 · Silicon crystallization using self-assembled monolayers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,071,022 B2 - Document ID: US7071022B2 - Status: Granted - Kind: B2 - Application number: 10/622,606 - Filed: 2003-07-18 - Published: 2005-01-20 - Granted: 2006-07-04 - Earliest claimed: 2003-07-18 - Assignees: Corning Incorporated - Inventors: J. Greg Couillard; Robert R. Hancock Rr; Mark A. Lewis - Web page: https://patentgrep.com/patent/US7071022B2 ## CPC - C03C 17/3657: {the multilayer coating having optical properties} - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - B82Y 40/00: Manufacture or treatment of nanostructures - C03C 17/3429: {at least one of the coatings being a non-oxide coating} - C03C 17/3482: {comprising silicon, hydrogenated silicon or a silicide} - C03C 17/42: at least one coating of an organic material and at least one non-metal coating - C23C 16/0272: {Deposition of sub-layers, e.g. to promote the adhesion of the main coating} - C30B 25/18: characterised by the substrate - C30B 29/06: Silicon - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/3238: {being insulating materials} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/36: {characterised by treatments done before the formation of the materials} - H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth} - C03C 2218/152: by cvd - C03C 2218/32: After-treatment - C03C: CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer. ## Claims ### Claim 1 A method of fabricating a monocrystalline or polycrystalline material over a substrate, comprising: depositing a self-assembled monolayer (SAM) over the substrate; depositing a layer over the SAM; and substantially crystallizing the layer, whereby crystallizing the layer comprises annealing the substrate; wherein the annealing is carried out at a temperature that is less than a strain point of the substrate. ### Claim 2 (depends on 1) A method as recited in claim 1, wherein the SAM material comprises molecules, which have an order and spacing that substantially matches an order and spacing of a lattice of the material. ### Claim 3 (depends on 1) A method as recited in claim 1, wherein the polycrystalline material is polycrystalline silicon. ### Claim 4 (depends on 1) A method as recited in claim 1, wherein the monocrystalline material is monocrystalline silicon. ### Claim 5 (depends on 1) A method as recited in claim 1, wherein the SAM layer is a compound of R—(CH2)N—Si—R′3, and the R′ groups arc cleaved during die providing of the SAM layer over the substrate. ### Claim 6 (depends on 1) A method as recited in claim 1, wherein the SAM layer is a compound of R—(CH2)N—Si—R′3, and the R′ group are cleaved during the depositing of the SAM layer over the substrate. ### Claim 7 A method of fabricating a monocrystalline or polycrystalline material over a substrate, comprising: depositing a self-assembled monolayer (SAM) over the substrate; depositing a layer over the SAM; substantially crystallizing the layer; and wherein the material is a semiconductor. ### Claim 8 (depends on 7) A method as recited in claim 7, wherein the semiconductor is chosen from the group consisting essentially of: silicon, germanium and silicon-germanium. ### Claim 9 (depends on 7) A method as recited in claim 7, wherein the substrate is an oxide of the semiconductor.