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US 7,071,021 B2Granted
PCRAM memory cell and method of making same
AssigneeMicron Technology, Inc.
InventorsSteven T. Harshfield, David Q. Wright
Life of this patent
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Abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
Claims36
A method of fabricating a memory cell, the method comprising the acts of:
- a. disposing a first line over a substrate, the first line being formed of a first metal;
- b. plating the first line with a second metal by immersion in a solution containing the second metal;
- c. disposing a layer of chalcogenide material over the second metal;
- d. transferring ions of the second metal into the chalcogenide material;
- and
- e. disposing a second line over the layer of chalcogenide material, the second line being formed of a third metal.
3 more elements
A method of fabricating a memory cell, the method comprising the acts of:
- a. disposing a layer of dielectric material over a substrate;
- b. forming a window in the layer of dielectric material;
- c. disposing a first metal in the window;
- d. plating the first metal with a second metal by immersion in a solution containing the second metal;
- e. disposing a layer of chalcogenide material over the second metal;
- f. transferring ions of the second metal into the chalcogenide material;
- and
- g. disposing a third metal over the layer of chalcogenide material.
5 more elements
A method of fabricating a memory cell, the method comprising the acts of:
- a. disposing a first layer of dielectric material on a substrate;
- b. forming a first window in the first layer of dielectric material;
- c. disposing a first metal in the first window;
- d. disposing a second layer of dielectric material over the first metal and the first layer of dielectric material;
- e. forming a second window in the second layer of dielectric material to expose at least a portion of the first metal in the first window;
- f. plating the first metal exposed by the second window with a second metal by immersion in a solution containing the second metal;
- g. disposing a layer of chalcogenide material over the second metal;
- h. transferring ions of the second metal into the chalcogenide material;
- and
- i. disposing a third metal over the layer of chalcogenide material.
7 more elements
A method of fabricating a memory cell, the method comprising the acts of:
- a. disposing a first layer of dielectric material on a substrate;
- b. forming a first window in the first layer of dielectric material;
- c. disposing a first metal in the first window;
- d. disposing a second layer of dielectric material over the first metal and the first layer of dielectric material;
- e. disposing a layer of a second metal over the second layer of dielectric material
- f. forming a second window in the second layer of dielectric material and in the layer of the second metal to expose at least a portion of the first metal in the first window;
- g. plating the first metal exposed by the second window with a third metal by immersion in a solution containing the third metal;
- h. disposing a layer of chalcogenide material over the third metal;
- i. transferring ions of the third metal into the chalcogenide material;
- and
- j. disposing a fourth metal over the layer of chalcogenide material.
8 more elements
Dependencies are inferred from the claim text.