System and method to improve image sensor sensitivity
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei Zhang, Chian-Liang Lin, Jung-Chen Yang, Chia-Chun Hung, Shih-Min Liu
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Abstract
A method is disclosed for forming at least one image sensor with improved sensitivity along with at least one transistor device. The method comprises forming at least a portion of the transistor device on a substrate, forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance, forming an etch stop layer for covering a contact area of the transistor device, removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor, and covering the image sensor and the transistor device by at least one transparent protection layer.
Claims21
A method for forming at least one image sensor with improved sensitivity along with at least one transistor device, the method comprising:
- forming a gate structure of the transistor device;
- placing an oxide layer on the gate structure and simultaneously on top of a predetermined area for the image sensor separated from the transistor device by an isolation structure;
- forming the image sensor by doping the predetermined area;
- forming at least one contact area;
- forming an etch stop layer for covering the contact area;
- removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor;
- and
- covering the image sensor and the transistor device by at least one transparent protection layer.
A method for forming at least one image sensor with improved sensitivity along with at least one transistor device, the method comprising:
- forming at least a portion of the transistor device on a substrate;
- forming the image sensor by doping a predetermined area separated from the transistor device by a minimum predetermined distance;
- forming an etch stop layer for covering a contact area of the transistor device;
- removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor;
- and
- covering the image sensor and the transistor device by at least one transparent protection layer.
A method for forming at least one image sensor with improved sensitivity along with at least one transistor device, the method comprising:
- forming at least a portion of the transistor device on a substrate;
- forming the image sensor by doping a predetermined area separated from the transistor device by an shallow trench isolation structure;
- forming a SiON containing etch stop layer for covering a contact area of the transistor device;
- removing at least a portion of the etch stop layer in the predetermined area for exposing the image sensor;
- and
- covering the image sensor and the transistor device by at least one undoped silicon glass layer with a thickness of at least about 200 angstroms.
Dependencies are inferred from the claim text.