Semiconductor light emitting device and method for producing the same
AssigneeRohm Co., Ltd.
InventorYukio Shakuda
Life of this patent
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Abstract
A light emitting device employing gallium nitride type compound semiconductor which generates no crystal defect, dislocation and can be separated easily to chips by cleavage and a method for producing the same are provided. As a substrate on which gallium nitride type compound semiconductor layers are stacked, a gallium nitride type compound semiconductor substrate, a single-crystal silicon, a group II-VI compound semiconductor substrate, or a group III-V compound semiconductor substrate is employed.
Claims10
A method for producing a semiconductor light emitting device comprising the steps of:
- (a) forming an insulating layer on a single-crystal silicon substrate;
- (b) forming a gallium nitride type compound semiconductor layer as a buffer layer on the insulating layer;
- (c) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of the gallium nitride type compound semiconductor;
- (d) exposing a predetermined surface of the buffer layer by etching perpendicularly to the single-crystal silicon substrate;
- (e) forming electrodes on both the cap layer and the predetermined surface of the buffer layer exposed by the etching treatment in step (d), whereby obtaining a semiconductor wafer having multilayer structure;
- and
- (f) separating the semiconductor wafer to chips by dicing or by cleaving,
- wherein the step of forming the insulating layer is implemented by removing an oxide film over the single-crystal silicon substrate and forming a silicon nitride layer by heating under an atmosphere of nitrogen gas.
A method for producing a semiconductor light emitting device comprising the steps of:
- (a) forming an insulating layer on a single-crystal silicon substrate;
- (b) forming a gallium nitride type compound semiconductor layer as a buffer layer on the insulating layer;
- (c) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of the gallium nitride type compound semiconductor;
- (d) exposing a predetermined surface of the buffer layer by etching perpendicularly to the single-crystal silicon substrate;
- (e) forming electrodes on both the cap layer and the predetermined surface of the buffer layer exposed by the etching treatment in step (d), whereby obtaining a semiconductor wafer having multilayer structure;
- and
- (f) separating the semiconductor wafer to chips by dicing or by cleaving, wherein the step of forming the insulating layer is implemented by growing a layer of aluminum oxide.
A method for producing a semiconductor light emitting device comprising the steps of:
- (j) preparing a group II-VI compound semiconductor substrate;
- (k) stacking a buffer layer of gallium nitride type compound semiconductor on a principal plane of the group II-VI compound semiconductor substrate;
- (l) stacking on the buffer layer in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of gallium nitride semiconductor, with matching crystal lattice of each layer to one another;
- (m) forming electrodes on both the top of the cap layer and the bottom of the group II-VI compound semiconductor substrate, whereby obtaining a semiconductor wafer having multilayer structure;
- and
- (n) cleaving the semiconductor wafer to chips.
A method for producing a semiconductor light emitting device comprising the steps of:
- (o) preparing a group III-V compound semiconductor substrate, said group III-V compound semiconductor selected from the group consisting of GaAs, InAs, GaP, and InP;
- (p) stacking a buffer layer of gallium nitride type compound semiconductor on a principal plane of the group III-V compound semiconductor substrate;
- (q) stacking on the buffer layers in sequence a lower cladding layer, an active layer, an upper cladding layer, and a cap layer, these layers being made of gallium nitride type semiconductor, with matching crystal lattice of each layer to one another;
- (r) forming electrodes on both the top of the cap layer and the bottom of the group III-V compound semiconductor substrate, whereby obtaining a semiconductor wafer having multilayer structure;
- and
- (s) cleaving the semiconductor wafer to chips.
Dependencies are inferred from the claim text.