Methods relating to the reconstruction of semiconductor wafers for wafer-level processing

A process for reconstructing a semiconductor wafer, comprising:

• forming at least a first alignment droplet and at least a second alignment droplet from a flowable alignment material at laterally spaced locations on a substrate comprising extruding the flowable alignment material through at least a first alignment via and at least a second alignment via to form the at least a first alignment droplet and the at least a second alignment droplet;
• placing a first semiconductor die having at least one alignment cavity on a surface thereof, such that the at least one alignment cavity of the first semiconductor die makes contact with the at least a first alignment droplet and is positioned by surface tension thereof;
• placing a second semiconductor die having at least one alignment cavity on a surface thereof, such that the at least one alignment cavity of the second semiconductor die makes contact with the at least a second alignment droplet and is positioned by surface tension thereof;
• inducing the at least a first alignment droplet and the at least a second alignment droplet to at least partially solidify to maintain positions of the first semiconductor die and the second semiconductor die;
• and
• subsequently introducing an underfill material adjacent the surfaces of the first and second semiconductor dice and surrounding the at least a first alignment droplet and the at least a second alignment droplet to form a reconstructed semiconductor wafer.

A method of performing wafer-level processing on a number of separate semiconductor dice, the method comprising:

• selecting a plurality of semiconductor dice;
• forming at least one alignment via on a rear surface of each semiconductor die of the plurality;
• positioning the semiconductor dice in proper positions wherein the alignment via of the rear surface of one semiconductor die is aligned with an alignment cavity of the mating semiconductor die to form a semiconductor wafer by placing the at least one alignment via in contact with corresponding alignment droplets positioned on a substrate and using surface tension of the alignment droplets to effect precise alignment of the semiconductor dice;
• subsequently underfilling between the positioned semiconductor dice and the substrate to form a reconstructed semiconductor wafer;
• and
• performing wafer-level processing on the reconstructed semiconductor wafer.