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US 7,071,008 B2Granted
Multi-resistive state material that uses dopants
AssigneeUnity Semiconductor Corporation
InventorsDarrell Rinerson, Wayne Kinney, Christophe J. Chevallier, Steven W. Longcor, Edmond R. Ward, Steve Kuo-Ren Hsia
Life of this patent
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Abstract
A multi-resistive state material that uses dopants is provided. A multi-resistive state material can be used in a memory cell to store information. However, a multi-resistive state material may not have electrical properties that are appropriate for a memory device. Intentionally doping a multi-resistive state material to modify the electrical properties can, therefore, be desirable.
Claims22
A method of modifying electrical properties of a two-terminal memory element in a cross point memory array, comprising:
- providing a substrate with active circuitry and multiple layers of conductive paths;
- supplying a plurality of two-terminal memory elements between pairs of conductive array lines in a cross point array directly over the substrate, each two-terminal memory element comprising a praseodymium (Pr), calcium (Ca), manganese (Mn), and oxygen (O) perovskite as a multi-resistive state material;
- doping the multi-resistive state material to modify at least one electrical property of the multi-resistive state material;
- and
- applying at least one electrical pulse to the pair of conductive array lines, the electrical pulse having a selected polarity, a selected width, a selected maximum value and a selected waveform so as to create an electric field in the multi-resistive state material greater than a threshold electric field value to reversibly change the resistivity of the multi-resistive state material, the pulse having a pulse energy less than a pulse energy required to damage the multi-resistive state material.
2 more elements
Dependencies are inferred from the claim text.