Back to results
US 7,070,905 B2Granted
Pattern forming process
AssigneeKabushiki Kaisha Toshiba
InventorsTakeshi Okino, Koji Asakawa, Naomi Shida, Toru Ushirogouchi, Satoshi Saito
Life of this patent
Estimating the term…
Abstract
According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
Claims7
A pattern forming process comprising the steps of:
- forming, on a substrate, a film containing the resist composition which comprises a resist resin obtained by homopolymerizing at least one monomer selected from monomers represented by the general formulas (I-1) and (I-2):
- wherein R is acryloyl or methacryloyl group, R11 and R12 are hydrogen atom or a monovalent alkyl group, with proviso that at least one of R11 and R12 is monovalent alkyl group, and R13 is OH group, ═O group, COOH group or COOR14 group, wherein R14 is a monovalent organic group, or by copolymerizing the monomer(s) and any other vinyl monomer, and a photo acid generator,
- subjecting the film to pattern-wise exposure, and
- developing the film exposed to light.
1 more element
Dependencies are inferred from the claim text.