Photomask, method for manufacturing the same, and method for measuring optical characteristics of wafer exposure system using the photomask during operation

A method for measuring aberration of a wafer exposure system during manufacture of a semiconductor device, the method comprising:

• providing a photomask including measuring patterns that include aplurality of light transmitting region patterns divided by a light opaque region pattern on a substrate, said measuring pattern introducing phase shifts to provide phase differences in light transmitted through the light transmitting region patterns, each light transmitting region pattern having a single depth being different than the depth of each of the other light transmitting region patterns;
• performing a photolithography process on a wafer to transfer the light transmitting region patterns and the light opaque region pattern based on the measuring patterns on the wafer;
• measuring a degree of shift of the transferred patterns on the wafer;
• and
• measuring a focus of an exposure system from the degree of the shift of the transferred patterns.

A method for measuring focus of a wafer exposure system during manufacture of a semiconductor device, comprising:

• providing a photomask including a measuring pattern that includes a plurality of light transmitting region patterns divided by a light opaque region pattern on a substrate, said measuring pattern introducing phase shifts to provide phase differences in light transmitted through the light transmitting region patterns, each light transmitting region pattern having a single depth being different than the depth of each of the other light transmitting region patterns;
• performing a photolithography process to transfer the light transmitting region patterns and the light opaque region pattern based on the measuring patterns on the wafer;
• measuring degrees of shifts of the transferred patterns on the wafer;
• and
• measuring a focus of an exposure system within the degrees of the shifts of the transferred patterns;
• wherein the light opaque region pattern is formed in a cross shape, dividing the four quadrants of the light transmitting region patterns, and the degrees of shifts of the transferred pattern are measured from a degree of relative shift of a certain transferred pattern to the other light transmitting region patterns of the quadrant regions.

A method for measuring focus of a wafer exposure system during manufacture of a semiconductor device, comprising:

• providing a photomask including a measuring pattern that includes a plurality of light transmitting region patterns divided by a light opaque region pattern on a substrate, said measuring pattern introducing phase shifts to provide phase differences in light transmitted through the light transmitting region patterns, each light transmitting region pattern having a single depth being different than the depth of each of the other light transmitting region patterns;
• performing a photolithography process to transfer the light transmitting region patterns and the light opaque region pattern based on the measuring patterns on the wafer;
• measuring degrees of shifts of the transferred patterns on the wafer;
• measuring a focus of an exposure system within the degrees of the shifts of the transferred patterns;
• and
• disposing a plurality of the measuring patterns on the substrate of the photomask, measuring the degrees of the shifts of the transferred patterns based on the disposed measuring patterns, and obtaining a focus map for all regions on the wafer corresponding to the photomask.

A method for measuring aberration of a wafer exposure system during manufacture of a semiconductor device, the method comprising:

• providing a photomask including measuring patterns that include a plurality of light transmitting region patterns divided by a light opaque region pattern on a substrate, said measuring pattern introducing phase shifts to provide phase differences in light transmitted through the light transmitting region patterns, each light transmitting region pattern having a single depth being different than the depth of each of the other light transmitting region patterns;
• performing a photolithography process on a wafer to transfer the light transmitting region patterns and the light opaque region pattern based on the measuring patterns on the wafer;
• measuring a degree of shift of the transferred patterns on the wafer;
• and
• measuring a focus of an exposure system from the degree of the shift of the transferred patterns;
• wherein the light opaque region is formed in a cross shape dividing the four quadrants of the patterns for light transmitting regions and the degree of shift of the transferred patterns are measured from the degree of shift of the transferred patterns based on the light transmitting region patterns of the quadrant regions.

A method for measuring aberration of a wafer exposure system during manufacture of a semiconductor device, the method comprising:

• providing a photomask including measuring patterns that include a plurality of light transmitting region patterns divided by a light opaque region pattern on a substrate, said measuring pattern introducing phase shifts to provide phase differences in light transmitted through the light transmitting region patterns, each light transmitting region pattern having a single depth being different than the depth of each of the other light transmitting region patterns;
• performing a photolithography process on a wafer to transfer the light transmitting region patterns and the light opaque region pattern based on the measuring patterns on the wafer;
• measuring a degree of shift of the transferred patterns on the wafer;
• measuring a focus of an exposure system from the degree of the shift of the transferred patterns;
• and
• disposing a plurality of measuring patterns on the substrate of the photomask, measuring the degree of the shift of the transferred patterns based on the disposed measuring patterns and obtaining an aberration map for all regions on the wafer corresponding to the photomask.