Diamond film and method for producing the same
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsHitoshi Noguchi, Yoshihiro Kubota
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Abstract
There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
Claims15
A method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas, and wherein, when the diamond film is produced on the base material, only a part of the film is formed with adding B(OCH3)3 gas to the raw material gas, and the other part of the film is formed without adding B(OCH3)3 gas to the raw material gas, thereby reducing the degradation in crystallinity and reducing the amount of trimethyl borate used.
Dependencies are inferred from the claim text.