Vertical-cavity surface emitting laser diode and its manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsMizunori Ezaki, Michihiko Nishigaki, Keiji Takaoka
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Abstract
A vertical-cavity surface emitting laser diode comprises: a first and a second reflectors; an active layer provided between the first and the second reflectors; and an oxidizee layer having a non-oxidized part and an oxidized part provided around the non-oxidized part. An electric current is injected into the non-oxidized part. The oxidizee layer has a proton-containing part including proton at least at a position substantially enclosing the non-oxidized part.
Claims20
A vertical-cavity surface emitting laser diode comprising a current confinement portion having a mesa including an oxidizee layer, the oxidizee layer having an oxidized part and a non-oxidized part, the oxidized part being formed by oxidizing the oxidizee layer from a side wall of the mesa, an electric current being injected on the non-oxidized part,
- the oxidizee layer having a proton-containing part including protons at an interface between the oxidized part and the non-oxidized part and without protons at an area adjacent to the side wall of the mesa.
A vertical-cavity surface emitting laser diode comprising a current confinement portion having a mesa including an oxidizee layer, the oxidizee layer having an oxidized part and a non-oxidized part, the oxidized part being formed by oxidizing the oxidizee layer from a side wall of the mesa, and an electric current being injected into the non-oxidized part, wherein
- a portion of the oxidizee layer, including an interface between the oxidized part and the non-oxidized part, includes protons, and without protons at an area adjacent to the side wall of the mesa.
A vertical-cavity surface emitting laser diode comprising:
- a first and a second reflectors;
- an active layer provided between the first and the second reflectors;
- and
- an oxidizee layer having a non-oxidized part and an oxidized part provided around the non-oxidized part,
- an electric current being injected into the non-oxidized part, and
- the oxidizee layer having a proton-containing part including protons substantially at an interface between the oxidized part and the non-oxidized part, and without protons at an area adjacent to a side wall of the oxidizee layer.
A vertical-cavity surface emitting laser diode comprising:
- a substrate;
- an active layer provided on the substrate and having a emitting part;
- a first and a second reflectors sandwiching the active layer therebetween and forming a laser cavity vertical to the substrate;
- a pair of electrodes configured to inject an electric current into the active layer;
- and
- an oxidizee layer provided above or below the active layer;
- a mesa formed to include the oxidizee layer, and
- the oxidizee layer having an oxidized part of a high resistance extending from a side wall of the mesa to a proximity of the emitting part, a non-oxidized part of a low resistance. surrounded by the oxidized part, and a proton-containing part including protons an interface between the oxidized part and the non-oxidized part and without protons at an area adjacent to the side wall of the mesa.
A method of manufacturing a vertical-cavity surface emitting laser diode having a mesa which includes a current confinement portion having an oxidizee layer, the oxidizee layer having an oxidized part and a non-oxidized part, the oxidized part being formed by oxidizing a part of the oxidizee layer, an electric current being concentrated on the non-oxidized part, comprising:
- forming a proton-containing part in the oxidizee layer by selectively implanting proton into the oxidizee layer, the proton-containing part not being located at a an area adjacent to a side face of the mesa;
- and
- forming the oxidized part by oxidizing the oxidizee layer from the side face to the proton-containing part.
Dependencies are inferred from the claim text.