Sense amplifier

A semiconductor integrated circuit comprising:

• first and second transistors having gate terminals being connected to each other and one drain terminal being connected to the other drain terminal;
• third and fourth transistors having gate terminals being connected to each other and one drain terminal being connected to the other drain terminal;
• a fifth transistor connected between a connection point of said respective drain terminals of said first and second transistors and a first data line;
• a sixth transistor connected between a connection point of said respective drain terminals of said third and fourth transistors and a second data line;
• and
• an offset supply circuit configured to supply an offset voltage to at least one of said first and second data lines before turning on said fifth and sixth transistors in order to cancel out said input offset voltage of said semiconductor integrated circuit,
• wherein said connection point of said respective drain terminals of said first and second transistors is connected to said respective gate terminals of said third and fourth transistors, and said respective gate terminals of said first and second transistors are connected to a connection point of the respective drain terminals of the third and fourth transistors.

A semiconductor integrated circuit comprising:

• first and second transistors having gate terminals being connected to each other and one drain terminal being connected to the other drain terminal;
• third and fourth transistors having gate terminals being connected to each other and one drain terminal being connected to the other drain terminal;
• a fifth transistor connected between a connection point of said respective drain terminals of said first and second transistors and a first data line;
• a sixth transistor connected between a connection point of said respective drain terminals of said third and fourth transistors and a second data line;
• a seventh transistor connected between said respective gate terminals of said first and second transistors and said first data line;
• and
• an eighth transistor connected between said respective gate terminals of said third and fourth transistors and said second data line,
• wherein said connection point of said respective drain terminals of said first and second transistors is connected to said respective gate terminals of said third and fourth transistors, and said respective gate terminals of said first and second transistors are connected to said respective drain terminals of said third and fourth transistors.

A semiconductor integrated circuit comprising:

• first and second transistors having one source terminal connected to the other drain terminal;
• third and fourth transistors having one source terminal connected to the other drain terminal;
• a fifth transistor connected between said source terminals of said second and fourth transistors and a first voltage terminal;
• a sixth transistor connected between said drain terminals of said first and third transistors and a second voltage terminal;
• a seventh transistor connected between said source terminals of said second and fourth transistors and said second voltage terminal;
• an eighth transistor having a gate terminal being connected to a gate terminal of said first transistor and having a drain terminal being connected to said source terminal of said first transistor and a gate terminal of said third transistor;
• a ninth transistor having a gate terminal being connected to a gate terminal of said third transistor and having a drain terminal being connected to said source terminal of said third transistor and a gate terminal of said first transistor;
• and
• a tenth transistor connected between source terminals of said eighth and ninth transistors and said first voltage terminal,
• wherein a first data line is connected to a gate terminal of said second transistor and a second data line is connected to a gate terminal of said fourth transistor.

A semiconductor integrated circuit comprising:

• first and second transistors having gate terminals being connected to each other and one drain terminal being connected to the other drain terminal;
• third and fourth transistors having gate terminals connected to each other and one drain terminal being connected to the other drain terminal;
• a fifth transistor connected between a connection point of said both drain terminals of said first and second transistors and a first data line;
• a sixth transistor connected between a connection point of said both drain terminals of said third and fourth transistors and a second data line;
• a first voltage setting circuit capable of further strongly (further weakly) holding high-level voltages of said both gate terminals of said first and second transistors;
• and
• a second voltage setting circuit capable of further strongly (further weakly) holding high-level voltages of said both gate terminals of said third and fourth transistors,
• wherein said connection point of said both drain terminals of said first and second transistors is connected to said respective gate terminals of said third and fourth transistors, and said respective gate terminals of said first and second transistors are connected to said connection point of said both drain terminals of the third and fourth transistors.