Circuit for generating data strobe signal in semiconductor device and method thereof
AssigneeHynix Semiconductor Inc.
InventorHo Youb Cho
Life of this patent
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Abstract
Provided is directed to a circuit for generating a DQS signal in a semiconductor memory device which includes: a DQS data generation unit for generating a DQS preamble signal and a DQS data, signals earlier than a CAS latency; a DQS output control signal generation unit for generating a control signal to drive the DQS preamble signal out before the CAS latency and to drive the DQS data out after the CAS latency; a DQS driver for driving the DQS preamble signal and a rising data of the DQS data from the DQS data generation unit according to a rising clock of the DQS output control signal generation unit, and driving a falling data from the DQS data generation unit according to a falling clock of the DQS output control signal generation unit.
Claims13
A circuit for generating a DQS signal in a semiconductor memory device, comprising:
- a DQS data generation unit for generating a DQS preamble signal earlier than a CAS latency and generating a DQS data after generating the DOS preamble signal, according to a preamble control signal;
- a DQS output control signal generation unit for generating a control signal to drive the DQS preamble signal output before the CAS latency and to drive the DQS data out after the CAS latency;
- and
- a DQS driver for driving the DQS preamble signal and a rising data of the DQS data from the DQS data generation unit according to a rising clock of the DQS output control signal generation unit, and driving a falling data of the DQS data from the DQS data generation unit according to a falling clock of the DQS output control signal generation unit.
Dependencies are inferred from the claim text.