Internal voltage generating circuit in semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorChang-Ho Do
Life of this patent
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Abstract
An internal voltage generating circuit in a semiconductor memory device includes a comparing unit for comparing a voltage level of an internal voltage with that of a reference voltage, a pull-up driving unit for performing a pull-up operation for an output terminal in response to an output signal of the comparing unit, and a discharging unit for discharging the output terminal in a period of which the voltage level of the internal voltage is higher than a predetermined target voltage level.
Claims15
An internal voltage generating circuit in a semiconductor memory device, comprising:
- a comparing means for comparing a voltage level of an internal voltage with that of a reference voltage;
- a pull-up driving means for performing a pull-up operation for an output terminal in response to an output signal of the comparing means;
- and
- a discharging means having two discharging units for discharging the output terminal in a period of which the voltage level of the internal voltage is higher than a predetermined target voltage level, wherein one of the two discharging units includes a plurality of active loads connected between the output terminal and a ground voltage in series.
An internal voltage generating circuit in a semiconductor memory device, comprising:
- a comparing means for comparing a voltage level of an internal voltage with that of a reference voltage;
- a pull-up driving means for performing a pull-up operation for an output terminal in response to an output signal of the comparing means;
- and
- a first discharging means for discharging the output terminal when the voltage level of the internal voltage is higher than a predetermined target voltage level in response to the internal voltage, wherein the first discharging means includes a plurality of active loads connected between the output terminal and a ground voltage in series;
- and
- a second discharging means for discharging the output terminal in response to a power supply voltage.
An internal voltage generating circuit in a semiconductor memory device, comprising:
- a comparing unit to compare a voltage level of an internal voltage with that of a reference voltage;
- a pull-up driving unit to perform a pull-up operation for an output terminal in response to an output signal of the comparing unit;
- and
- a discharging unit configured to discharge the output terminal in a period of which the voltage level of the internal voltage is higher than a predetermined target voltage level, the discharging unit including first and second discharging components,
- wherein one of the first discharging unit, the second discharging unit, and combination thereof includes a plurality of active loads provided in series between the output terminal and the ground.
Dependencies are inferred from the claim text.