Magnetic random access memory, and production method therefor

The magnetic random access memory comprising a plurality of memory cell,

• wherein each of said plurality of memory cells comprises:
• an MTJ (magnetic tunnel junction) device;
• a MISFET (metal insulator semiconductor field effect transistor);
• a first wiring line;
• and
• a second wiring line,
• said MTJ device comprises:
• a pinned ferromagnetic layer which has a fixed pinned magnetization;
• a free ferromagnetic lamination layer;
• and
• a tunnel barrier layer interposed between said pinned ferromagnetic layer and said free ferromagnetic lamination layer,
• said free ferromagnetic lamination layer comprises:
• a first ferromagnetic layer coupled to said tunnel barrier layer and having a first magnetization which is reversible;
• a second ferromagnetic layer which has a second magnetization whose direction is opposite to a direction of said magnetization, the direction of said second magnetization being reversible;
• and
• a non-magnetic conductive layer put between said first ferromagnetic layer and said second ferromagnetic layer and having a sheet resistance lower than that of each of said first ferromagnetic layer and said second ferromagnetic layer,
• said first wiring line said second wiring line are coupled to said free ferromagnetic lamination layer,
• said MISFET is connected with said free ferromagnetic lamination layer through said second wiring line,
• one of said first wiring line and said second wiring line supplies a write current to said free ferromagnetic lamination layer to reverse said first magnetization and said second magnetization, and
• the other of said first wiring line and said second wiring line receives said write current from said free ferromagnetic lamination layer.

A magnetic random access memory comprising:

• a pinned ferromagnetic layer having a pinned magnetization;
• a free ferromagnetic lamination layer;
• a tunnel barrier layer interposed between said pinned ferromagnetic layer and said free ferromagnetic lamination layer;
• and
• a current supply section,
• wherein said free ferromagnetic lamination layer comprises:
• a first ferromagnetic layer coupled to said tunnel barrier layer and having a first magnetization which is reversible;
• a second ferromagnetic layer having a second magnetization whose direction is opposite to the direction of said first magnetization, the direction of said second magnetization being reversible;
• and
• a non-magnetic conductive layer put between said first ferromagnetic layer and said second ferromagnetic layer,
• said current supply section supplies a current to said free ferromagnetic lamination layer to reverse directions of said first magnetization and said second magnetization,
• said current passes through said second ferromagnetic layer to flow into said non-magnetic conductive layer, flows through said non-magnetic conductive layer in a direction which has a direction component parallel to the surface of said non-magnetic conductive layer, and flows out from said free ferromagnetic lamination layer through said non-magnetic conductive layer and said second ferromagnetic layer.