US 7,068,527 B2 · Match line sensing amplifier for content addressable memory

Abstract

A method and apparatus for sensing a state of a memory circuit, in particular a content address memory (CAM) device are described. The method includes receiving a first current signal as an input, the first current signal corresponding to a state of the memory circuit, converting the first current signal into a first voltage signal, converting the first voltage signal into a second voltage signal and sensing the second voltage signal. The apparatus includes an input adapted to receive a first current signal, the first current signal corresponding to the state of the memory circuit; and a current mirror circuit having a first portion adapted to receive the first current signal and convert the first current signal to a first voltage signal and a second portion adapted to receive the first voltage signal and convert the first voltage signal into a second voltage signal as an output.

Claims11

Dependent claims

A method of sensing a state of a content addressable memory element, said method comprising the acts of:

generating a first control signal to initiate a precharge operation on a match line associated with said content addressable memory element;
generating a second control signal to cause current indicative of the state of the memory element to flow to a load and become a first voltage;
and
generating a third control signal to convert the first voltage to a second voltage.

1 more element

Dependencies are inferred from the claim text.

Match line sensing amplifier for content addressable memory

Life of this patent

Match line sensing amplifier for content addressable memory

Life of this patent

Abstract

Claims11