Semiconductor device

An RF power amplifier module comprising:

• a semiconductor chip having a quadrilateral surface;
• a package in which said semiconductor chip is enclosed;
• and
• a conductive structure having a first conductive structure which is used to couple said package with outside of said package and a second conductive structure which is used to couple said package with said semiconductor chip,
• said semiconductor chip having:
• a first electrode formed on a main surface of said semiconductor chip;
• a first amplifier, formed also on said main surface of said semiconductor chip, having an input port electrically coupled with said first electrode;
• a second electrode formed on said main surface of said semiconductor chip;
• and
• a second amplifier, formed also on said main surface of said semiconductor chip, having an output port electrically coupled with said second electrode,
• said first conductive structure having:
• a third electrode electrically coupled with said first electrode through a first wire;
• and
• a fourth electrode electrically coupled with said second electrode through a second wire,
• wherein said first conductive structure includes a third conductive structure on which said semiconductor chip is mounted and which is electrically coupled with an external terminal outside of said package, said external terminal being fixed to an electric potential of a reference level,
• wherein said second conductive structure includes a fourth conductive structure which electrically couples an output port of said first amplifier with an input port of said second amplifier within said package,
• wherein said third electrode is disposed facing a first side selected from four sides of said semiconductor chip, and
• wherein said fourth electrode is disposed facing a second side selected from said four sides, said first side and said second side intersect each other at a corner selected from four corners of said semiconductor chip.