High frequency high power H-bridge power amplifier

A drive assembly for providing a pulse-width-modulated input signal to a load, comprising:

• a plurality of half-bridge assemblies that each include two switching elements capable of operating at no more than a predetermined frequency and a predetermined current level, wherein at least two half-bridge assemblies in a grouping are electrically connected to the load, such that the at least two half-bridge assemblies are capable of providing a pulse-width-modulated input voltage to the load at a frequency higher than the predetermined frequency and at a current level equal to the predetermined current level.

A method of scaling the pulse-width-modulated (PWM) frequency output of a power amplifier drive assembly configured as an H-bridge system, comprising the step of:

• sequentially activating a plurality of half-bridge assemblies in the H-bridge system to generate a composite output signal to a load, wherein each of the half-bridge assemblies comprises insulated gate bipolar transistors (IGBT's), wherein the frequency of the composite output signal is greater than the frequency capability of a single one of the half-bridge assemblies, and wherein the frequency of the composite output signal is equal to the product of the frequency capability of a single one of the half-bridge assemblies and the number of half-bridge assemblies in a grouping.

A drive assembly for providing a pulse-width-modulated input signal to a load, comprising:

• a plurality of half bridge assemblies that each include two insulated gate bipolar transistors (IGBT's) capable of operating at no more than a predetermined frequency and a predetermined current level, wherein at least two half-bridge assemblies in a grouping are electrically connected to the load, such that the at least two half-bridge assemblies are capable of providing a pulse-width-modulated input voltage to the load at a frequency higher than the predetermined frequency and at a current level equal to the predetermined current level, and wherein the at least two half-bridge assemblies in a grouping that are electrically connected to the load are capable of providing the pulse-width-modulated input voltage to the load at a frequency equal to the product of the number of half-bridge assemblies in a grouping electrically connected to the load and the predetermined operating frequency of the insulated gate bipolar transistors (IGBT's).