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US 7,067,956 B2Granted
Surface acoustic wave device, filter device and method of producing the surface acoustic wave device
AssigneesFujitsu Media Devices Limited, Fujitsu Limited
InventorsMasahiko Imai, Michio Miura, Takashi Matsuda, Masanori Ueda, Osamu Ikata
Life of this patent
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Abstract
A surface acoustic wave device includes a piezoelectric substrate on which resonators having comb-like electrodes are formed; and a silicon substrate that is directly bonded to the piezoelectric substrate and is less expansive than the piezoelectric substrate, a cavity being formed in the silicon substrate and being located below at least one of the resonators.
Claims10
A surface acoustic wave device comprising:
- a piezoelectric substrate on which at least two resonators having comb-like electrodes are formed;
- and
- a silicon substrate that is directly bonded to the piezoelectric substrate and is less expansive than the piezoelectric substrate, wherein under each of said at least two resonators
- a cavity is formed in the silicon substrate.
1 more element
Dependencies are inferred from the claim text.