Semiconductor chip and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
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Abstract
A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
Claims22
A semiconductor chip comprising:
- a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer;
- a thermal conductive film formed on the first device formative layer;
- and
- a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer.
A semiconductor chip comprising:
- a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer;
- a thermal conductive film formed on the first device formative layer;
- and
- a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer,
- wherein each of the first device formative layer and the second device formative layer is electrically connected to the thermal conductive substrate by a connection wire.
A semiconductor chip comprising:
- a first device formative layer with a thickness of at most 50 μm provided over a thermal conductive substrate via a first adhesive layer;
- a thermal conductive film formed on the first device formative layer;
- and
- a second device formative layer with a thickness of at most 50 μm formed over the thermal conductive film via a second adhesive layer,
- wherein a first semiconductor device included in the first device formative layer and a second semiconductor device included in the second device formative layer are electrically connected via the second adhesive layer by a first wiring included in the first device formative layer and an auxiliary wiring connected electrically to a second wiring included in the second formative layer.
Dependencies are inferred from the claim text.